Sponsored by: EMPMD Thin Films & Interfaces Committee
Program Organizers: N. M. Ravindra, New Jersey Institute of Technology, Newark, NJ; R. K. Singh, University of Florida, Gainesville, FL
Tuesday, AM Room: Grand J
February 6, 1996 Location: Anaheim Marriott Hotel
Session Chairmen: Bhushan Sopori, Naitonal Renewable Energy Lab, Golden CO; Anthony Fiory, AT & T Bell Laboratories, Murray Hill, NJ
8:30 am Invited
RAPID THERMAL ANNEALING ISSUES IN SILICON PROCESSING: Richard B. Fair, Dept. of Electrical and Computer-Engineering, Duke University, Durham, NC 27708
Rapid Thermal Annealing (RTA) in silicon technology provides a controlled environment for thermally activated processes that is increasingly difficult to achieve in batch furnace systems. However, the vast majority of RTA tools use optical radiant sources which create a complex heating system for silicon wafers with multiple absorbing and reflecting layers which are usually patterned in device structures. Optical interference at overlayer interfaces modulates the wafer emissivity, and thus, the amount of energy absorbed causing large differences in temperature across the wafer. As a result, the introduction of RTA, RTO and RTCVD into manufacturing has had limited success, since these are all activated processes that are sensitive to changes in temperature. This talk will review issues in applying RTA to manufacturing silicon ICs with particular emphasis on optical radiation effects on temperature uniformity and measurement, dopant activation, and the particular challenge of limiting dopant diffusion in shallow junctions during the simultaneous removal or establishment of defects in crystalline silicon.
9:00 am Invited
TRANSIENT ENHANCED DIFFUSION IN BORON IMPLANTED SILICON: Kevin S. Jones, Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611-6400
An overview of recent results correlating transient enhanced diffusion (TED) and extended defects will be presented for boron implanted silicon. There appear to be several different types of TED depending on the extended defects that mediate the release of the excess interstitials. Results will be presented on how the implant conditions affect the transition between these different types of defects and therefore TED. Measurements using doped superlattices and SIMS of the point defect flux during different kinds of TED will be presented. Finally it will be shown that there are distinctly different activation energies for saturation of TED depending on the type of extended defect or cluster mediating the process.
9:30 am Invited
DOPANT DIFFUSION IN RT PROCESSED MATERIALS: M.E. Law, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Abstract not available.
10:00 am BREAK
CURRENT STATUS OF RTCVD IN SILICON PROCESSING: O.H. Gokce & N.M. Ravindra, Department of Physics, New Jersey Insitute of Technology, Newark, NJ 07102
Abstract not available.
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