The following is a list of sessions, organizers, paper titles, and authors for the 37th Electronic Materials Conference, which is sponsored by The Minerals, Metals & Society and will be held June 21-23, 1995, in Charlottesville, Virginia.
10:00 AM, A1
"Quantitative Study of MOCVD Grown InGaAs/InGaAsP/InGaP Quantum Wells on GaAs Substrates," by L.J. Mawst and A. Bhattacharya, Reed Center For Photonics, University of Wisconsin-Madison, Madison, WI 53706; Jiang Li and T.F. Kuech, Department of Chemical Engineering, University of Wisconsin-Madison, Madison, WI 53706; and S. Nayak, Materials Science Program, University of Wisconsin-Madison, Madison, WI 53706
10:20AM, A2 (Student Paper)
"Growth and Characterization of InAlP-InGaP Modulated-Strain Superlattice-Barrier Quantum-Well Heterostructures," by M.R. Islam, R.V. Chelakara, J.G. Neff, and R.D. Dupuis, Microelectronics Researech Center, The University of Texas at Austin, MER 1.606D-R9900, Austin, TX 78712-1100
10:40AM, A3
"Modulated Metalorganic Vapour Phase Epitaxial Growth of Highly Ordered (GaIn)P," by Z. Spika, W. Stolz, and E.O. Gobel, Philipps-Universitat Marburg, Wissenschaftliches Zentrum Fur Materialwissenschaften (WZMW), 35032 Marburg, Germany; and Y. Jiang and A. Schaper, Fachbereich Physik und Fachbereich Geowissenschaften, 35032 Marburg, Germany
11:00AM, A4
"Ordering of MOCVD Grown Monolayers of GaInP in GaAs as Revealed by Strain Measurements," by A.R. Clawson, University of California San Diego, ECE Dept.-0407, 9500 Gilman Drive, La Jolla, CA 92093-0407; and C.M. Hanson, NCCOSC RDTE Div 555, 4925 Bennett St., Room 111, San Diego, CA 92152-5790
11:20AM, A5
"Tertiarybutylarsine for Metalorganic Vapor Phase Epitaxy Growth of High Purity Device Quality Materials," by H.C. Chui, R.M. Biefeld, B.E. Hammons, T.M. Brennan, W.G. Breiland, and E.D. Jones, Sandia National Laboratories, Albuquerque, NM 87185-0603; and M.H. Kim, P. Grodzinski, K.H. Chang, and H.C. Lee, Phoenix Corporate Research Laboratories, Motorola Inc., Tempe, AZ 85284
11:40AM, A6
"Mechanism of Arsine Decomposition on GaAs(001)," by Haihua Qi, Paul E. Gee, and Robert F. Hicks, Chemical Engineering Department, University of California, Los Angeles, CA 90095-1592
10:00AM, B1
"Correlation of Double Crystal X-Ray Diffraction Wafer Mapping and Device Performance of Al0.48In0.52As/Ga0.47In0.53As HBT s on 3 Inch InP Substrates," by David Grider, Hsiang C.Sun, Mary Montes and William Stanchina, Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
10:20AM, B2
"Room Temperature Photoreflectance Characterization of Wafer-Sized InGaAsP/InP Multiquantum Well Laser Structures," by M. Leibovitch and Fred H. Pollak, Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210; R. Lum, M.L. McDonald and M.S. Hybertsen, AT&T Bell Telephone Laboratories, Murray Hill, NJ 07974; M.L. Gray, AT&T Bell Telephone Laboratories, Reading, PA 19612
10:40AM, B3
"Photoreflectance Study of Transport Properties in GaAs under High Electric Fields," by Masamichi Sakai and Takashi Sekiguchi, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980 Japan; James R. Anderson and Colin E.C. Wood, Joint Program for Advanced Electronic Materials, Department of Physics, University of Maryland and Laboratory for Physical Sciences, College Park, MD 20742
11:00AM, B4
"Determination of Free Carrier Concentration in n-GaInP Alloy Epilayers and Devices by Raman Scattering," by K. Sinha, A. Mascarenhas, Sarah R. Kurtz and J.M. Olson, National Renewable Energy Laboratory, 1617 Cole Blvd., MS/SERF, Golden, CO 80401
11:20AM, B5
"Optical Characterization of 3-12um Thick Double-Side Polished Silicon Substrates," by C.S. Demain and S.H. Jones, University of Virginia, Applied Electrophysics Laboratory, Department of Electrical Engineering, Charlottesville, VA 22903
11:40AM, B6
"Compositional Dependence of the Luminescence of Inx(AlyGa1-y)1-xP Alloys Near the Direct-Indirect Bandgap Crossover," by J.S. Nelson, E.D. Jones, S.M. Myers, D.M. Follstaedt, R.P. Schneider, J.E. Schirber and H.P. Hjalmarson, Sandia National Laboratories, Albuquerque, NM 87185; J. Fouquet, V. Robbins and K. Carey, Hewlett Packard Company, 3500 Deer Creek Road, Palo Alto, CA
10:00AM, C1 (Invited)
"Electrical and Optical Characterization of Transparent Conducting Oxides," by G.A. Thomas, D.H. Rapkine, S.A. Carter, J. Kwo, J.M. Phillips and R.J. Cava, AT&T Bell Laboratories, Murray Hill, NJ 07974-0636
10:40AM, C2
"Optical Properties of Rare-Earth Doped Barium Titanate Ferroelectric Thin Films," by B.A. Block and B.W. Wessels, Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208; D. Studebaker and T.J. Marks, Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL 60208
11:00AM, C3
"Characterization of Epitaxial PbZrxTi1-xO3 Thin Films Prepared on Si Substrates with SrTiO3 or CeO2 Buffer Layers," by E. Tokumitsu, K. Itani, B.K. Moon, and H. Ishiwara, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama 226, Japan; and M. Yoshimoto, K. Shimozono, T. Onishi, T. Maeda, and H. Koinuma, Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama 226, Japan
11:20AM, C4
"Transparent Schottky Contacts on In0.52Al0.48As," by Wei Gao, Paul R. Berger, and Robert G. Hunsperger, Department of Electrical Engineering, University of Delaware, Newark, DE 19716; and G. Zydzik, H.M. O'Bryan, D. Sivco, and A.Y. Cho, AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
11:40AM, C5
Late News
1:30PM, D1 (Invited)
"Pseudopotential Electronic Structure Theory of Si Quantum Structures, Dots, Films and Wires," by Alex Zunger, National Renewable Energy Laboratory, Golden, CO 80401
2:10PM, D2 (Student Paper)
"Calculation of the Electronic Properties of Quantum Confined Semiconductors," by Nicola A. Hill and K. Birgitta Whaley, Department of Chemistry, University of California, Berkeley, CA 94720
2:30PM, D3
"Photoluminescence Spectra of Silicon Nanometer Grains (<10nm) Embedded in CaF2 Thin Films on Si(111)," by M. Watanabe, F. Iizuka and M. Asada, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okoyama, Meguro-ku, Tokyo 152, Japan
2:50PM, D4
"Anomalously High Dielectric Permittivities Observed in Si and SiC Nanoparticles," by P.D. Milewski and A.I. Kingon, North Carolina State University, Raleigh, NC 27695-7919
3:30PM, D5
"Assessment of High Quality RT-CVD Relaxed Si1-xGex Grown on Ge Graded Buffer Layers on Si by Photoluminescence Spectroscopy," by G. Bremond and A. Souifi, Laboratoire de Physique de la Matiere (URA CNRS 358) Bât 502-INSA, 20, Avenue Albert Einstein-69621 Villeurbanne Cedex France; P. Warren and D. Dutartre, TELECOM-CNET, BP 98 F-38243 Meylan Cedex France
3:50PM, D6 (Student Paper)
"Relaxed Low Dislocation Si1-xGex Films on BESOI," by Martin O. Tanner, Michael A. Chu and Kang L. Wang, Device Research Laboratory, Department of Electrical Engineering, UCLA, Los Angeles, CA 90095-1594; Marjohn Meshkinpour and Mark S. Goorsky, Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095
4:10PM, D7 (Student Paper)
"Effect of Composition on Traps and Recombination-Generation Centers in GexSi1-x Epitaxial Layers Graded to Pure Ge," by P.N. Grillot and S.A. Ringel, Electronic Materials and Device Laboratory, Department of Electrical Engineering, The Ohio State University, 2015 Neil Ave., Columbus, OH 43210-1272; E.A. Fitzgerald, Massachusetts Institute of Technology, Department of Materials Science and Engineering, rm. 13-4053, Cambridge, MA 02139; T.W. Sorsch, AT&T Bell Laboratories, rm. 1C-442, 600 Mountain Ave., Murray Hill, NH 07974
4:30PM, D8 (Student Paper)
"Thermal Stability of Strained Si Channel SiGe Heterostructures," by H. Klauk and T.N. Jackson, Department of Electrical Engineering, Penn State University, University Park, PA 16802; S.F. Nelson, Department of Physics, Colby College, Waterville, ME 04901; J.O. Chu, IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
1:30PM, E1
"InP/InGaAs HBT's Grown by Solid-Source MBE Using a Valved Phosphorus Cracker," by W.L. Chen and G.I. Haddad, Solid-State Electronics Laboratory, Dept. of EECS, The University of Michigan, Ann Arbor, MI 48109-2122; and T.P. Chin and J.M. Woodall, School of Electrical Engineering, Purdue University, West LAfayette, IN 47907-1285
1:50PM, E2 (Student Paper)
"Heavily Carbon Doped Base (p>1x1020 cm-3) IN0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors Grown by MOCVD," by Quesnell J. Hartmann, Michael T. Fresina, David A. Ahmari, and Gregory E. Stillman, University of Illinois at Urbana/Champaign, Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, 150 Microelectronics Laboratory, Urbana, IL 61801
2:10PM, E3
"Bandgap Engineering of GaInP/GaAs/GaInP Double Heterojunction Bipolar Transistors using Gas-Source Molecular Beam Epitaxy," by Material and Implementation Issues: Takyiu Liu, Chanh Nguyen, and Hsiang-Chih Sun, Hughes Research Laboratories, RL 61, 3011 Malibu Canyon Road, Malibu, CA 90265
2:30PM, E4
"Selective Infill MOMBE of InP:Si n+/n--Layers for Buried Collector DHBTs," by H. Kunzel, S. Schelhase, J. Bottcher, R. Gibis, P. Harde, and A. Paraskevopoulos, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin, Einsteinufer 37, D-10587, Berlin, Germany
2:50PM, E5
"Development of a Sidewall Resonant Tunneling Diode," by T.S. Moise, E.A. Beam III, and J.N. Randall, Corporate Research and Development, MS-134, Texas Instruments Inc., P.O. Box 655936, Dallas, TX 75265
3:30PM, E6
"MBE Growth of Lattice Constant Engineered (LCE) HEMTs for RF Power Applications," by Daniel Docter, Julia Brown, and David Grider, Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
3:50PM, E7
"The Role of GaAs Substrate Perfection on Pseudomorphic Heterostructure Stability," by M.S. Goorsky, M. Meshkinpour, and K.M. Matney, University of California-Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595; and D.C. Streit, T.R. Block, and M. Wojotowicz, TRW Electronic Technology Division, Space and Electronics Group, Redondo Beach, CA 90278
4:10PM, E8 (Student Paper)
"Molecular Beam Epitaxial Growth of Strained AlGaInAs Multi-Quantum Well Lasers on InP," by M.J. Mondry and L.A. Coldren, Department of Electrical and Computer Engineering, Box #45, University of California, Santa Barbara, CA 93106
4:30PM, E9 (Student Paper)
"Band Structure and Band Alignments of Strained and Lattice Matched InGaP/InAlP Heterostructures," by K. Interholzinger, D. Patel, C.S Menoni, O. Buccafusca, L.M. Woods, and G.Y. Robinson, Optoelectronic Computing System Center and Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523; and J.E. Fouquet, Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
1:30PM, F1
"Geometry and Clusters in Non-Stochiometric III-V Materials," by J.P. Kreskovsky and H.L. Grubin, Scientific Research Associates, Inc., Glastonbury, CT 06033
1:50PM, F2 (Student Paper)
"Characterization of Electron Traps in Undoped GaAs Epilayers Grown by Molecular Beam Epitaxy at 200-600deg.C and Correlation with Electrical Properties of the GaAs Epilayers," by C.H. Goo, W.S. Lau, and T.C. Chong, Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511
2:10PM, F3
"Molecular Beam Epitaxy of Low-Temperature-Grown GaAs Buffer Layers for Pseudomorphic High Electron Mobility Transistors," by K.B. Nichols and R. Actis, Massachusetts Institute of Technology, Lincoln Laboratory, P.O. Box 73, 244 Wood Street, Lexington, MA 02173; and T.J. Rogers, W.F. Kopp, and F.W. Smith, Martin Marietta Laboratory-Syracuse, Electronics Parkway Building 3, Syracuse, NY 13221
2:30PM, F4
"Ultrafast Optical Response of LT III-V Semiconductors," by Physics and Materials Science: P.M. Fauchet, G.W. Wicks. Y. Kostoulas, M.W. Koch, K.B. Ucer, and A.I. Lobad, Department of Electrical Engineering, The Institute of Optics, and Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
2:50PM, F5 (Student Paper)
"Sharp Exciton Spectra in Low-Temperature-Growth Quantum Wells," by I. Lahiri and D.D. Nolte, Department of Physics and the MRSEC for Technology-Enabling Heterostructure Materials, 1396 Physics Building, Purdue University, West Lafayette, IN 47907-1396; E.S. Harmon, J.C.P. Chang, M.R. Melloch, and J.M. Woodall, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1396
3:30PM, F6
"Intermediate Growth Temperature MBE GaAs in MSM Large Area Photodetectors," by B.C. Tousley, N. Davids, and A.H. Sayles, Photonics Research Center and Department of Electrical Engineering and Computer Science, United States Military Academy, West Point, NY 10996; A. Paolella, P. Cooke, M.L. Lemoune, and R.P. Moerkirk, Army Research Laboratory, Electronics and Power Sources Directorate, Ft. Monmouth, NJ 07703; and B. Nabet and L.C. Liou, Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104
3:50PM, F7
"Low Resistive Through-Alloyed Ohmic Contacts to LT-GaAs Passivated Active Layers in the Presence of an As-Diffision Barrier," by R. Westphalen, J. Heinzmann, K.-M. Lipka, And E. Kohn, University of Ulm, Department of Electronic Devices and Circuits, D-89069, Ulm, Germany; and B. Splingart, University of Lille, IEMN, 59652 Villeneuve d'Ascq, France
4:10PM, F8 (Student Paper)
"The Use of Annealed LTG-GaAs as a Selective Photoetch-Stop Layer," by E.H. Chen, T.P. Chin, M.R. Melloch, and J.M. Woodall, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1285
4:30PM, F9
"Controlled Near-Surface Arsenic Precipitation in GaAs," by R.A. Kiehl, M. Saito, Y. Yamaguchi, O. Ueda, T. Oshima, and N. Yokoyama, Fujitsu Laboratories, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
4:50PM, F10 (Student Paper)
"Magnetic Measurements on Fe3GaAs Precipitates in GaAs," by T.M. Pekarek and B.C. Crooker, Department of Physics, Purdue University, West Lafayette, IN 47907; D.D. Nolte, Department of Physics and the MRSEC for Technology-Enabling Heterostructure Materials, Purdue University, West Lafayette, IN 47907; J.C.P. Chang, E.S. Harmon, M.R. Melloch, and J.M. Woodall, School of Electrical Enginering and the MRSEC for Technology-Enabling Heterostructure Materials, Purdue University, West Lafayette, IN 47907
8:20AM, G1 (Student Paper)
"AFM Observations of GaN Nucleation Layer Morphology and Correlation to Structural and Optical Properties of GaN on Sapphire," by D. Kapolnek, B. Heying, W. Xuchua, E. Tarsa, J.S. Speck, and S.P. DenBaars, Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106; B.P. Keller, S. Keller, and U.K. Mishra, Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA 93106; and H. Masui, Visiting Researcher, Stanley Electric Co., Ltd., Yokohama, Japan
8:40AM, G2
"P-Type GaN Epitaxial Growth on c-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor," by C. Yuan, T. Salagaj, A. Gurary, P. Zawadzki, C.S. Chern, W. Kroll, and R.A. Stall, Emcore Corporation, 35 Elizabeth Avenue., Somerset, NJ 08817; C.-Y. Hwang, Y. Li, M. Schurman, W.E. Mayo, and Y. Lu, Rugters University, Piscataway, NJ 08855; S.J. Pearton, Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611; and S. Krishnankutty and R.M. Kolbas, Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
9:00AM, G3
"Residual Impurities in GaN/Al2O3 Grown by Metalorganic Vapor Phase Epitaxy," by Akihiko Ishibashi, Masaya Mannoh, Hidemi Takeishi, and Kiyoshi Ohnaka, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan; and Yasufumi Yabuuchi, Matsushita Technoresearch, Inc., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan
9:20AM, G4 (Student Paper)
"Growth and Characterization of Vapor Epitaxial GaN," by Gyu-Chul Yi, Department of Physics and Astronomy, Materials Research Center, Northwestern University, Evanston, IL 60208; and Bruce W. Wessels, Department of Materials Science and Engineering, Materials Research Center, Northwestern University, Evanston, IL 60208
9:40AM, G5
"Plasma-Assisted MBE Growth of GaN on Lattice Matched Metal Substrates," by D.C. Paine, R. Beresford, C. Briant, M. Kinniburgh, K.S. Stevens, and B. Rong, Brown University, Division of Engineering, Box D, Providence, RI 02806
10:20AM, G6
"Deposition of High Quality Wurtzite GaN Films over Cubic (100) and (111) Spinel Substrates by Low Pressure MOCVD," by Q. Chen, J.W. Yang, C.J. Sun, and M. Asif Khan, APA Optics Inc., 2950 N.E. 84th Lane, Blaine, MN 55449; and T. George, Center for Space Microelectronic Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
10:40AM, G7
"MBE Growth and Properties of ZnO on Sapphire and SiC Substrates," by M.A.L. Johnson, Shizuo Fujita, W.H. Rowland, Jr., W.C. Hughes, J.W. Cook, Jr., and J.F. Schetzina, North Carolina State University, Box 8202, Raleigh, NM 27695
11:00AM, G8
"MBE Growth and Properties of GaN, AlxGa1-xN and AlN on GaN/SiC Substrates," by M.A.L. Johnson, Shizuo Fujita, W.H. Rowland, Jr., W.C. Hughes, Y.W. He, N.A. El Masry, J.W. Cook, Jr., and J.F. Schetzina, North Carolina State University, Box 8202, Raleigh, NC 27695; J. Ren and J.A. Edmond, Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
11:20AM, G9
"Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001) GaAs by RHEED," by H. Yang, O. Brandt, and K. Ploog, Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany
11:40AM, G10
Late News
8:20am, H1
"Quantum Dot by Island Formation in InAs/GaAs Heteroepitaxy," by A. Sasaki, Y. Nabetani, T. Ishikawa, N. Yamamoto and T. Tokuda, Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
8:40AM, H2 (Student Paper)
"Ordering of Vertically Stacked Growth Induced InAs Islands on GaAs," by G.S. Solomon, J.A. Trezza and J.S. Harris Jr., Solid State Laboratories, Stanford University, Stanford, CA 94305-4055; A.F. Marshall, Center for Materials Research, Stanford University, Stanford, CA 94305-4055
9:00AM, H3 (Student Paper)
"Room Temperature Photoluminescence at 1.32 micrometers from InGaAs Quantum Dots on GaAs Substrates," by Richard Mirin and John Bowers, ECE Dept. UC Santa Barbara, Santa Barbara, CA 93106; James Ibbetson, Materials Dept., UC Santa Barbara, Santa Barbara, CA 93106; Arthur Gossard, ECE Dept. and Materials Dept., UC Santa Barbara, Santa Barbara, CA 93106
9:20AM, H4
"Characterization of InAs Quantum Dots Fabricated by MBE and Wet Chemical Etching," by Kanji Yoh, Hayato Takeuchi, Toshiya Saitoh and Hideki Hasegawa, Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060 Japan
9:40AM, H5
"Molecular Beam Epitaxial Growth of InSb, GaSb, and AlSb Quantum Dots on GaAs," by B.R. Bennett, R. Magno, B.V. Shanabrook and M.E. Twigg, Naval Research Laboratory, Code 6800, Washington, DC 20375-5347
10:20AM, H6
"Optical Characterization of Single Submonolayer InAs Structures Grown on GaAs (001) Matrix," by Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhiliang Yuan, Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing100083, China
10:40AM, H7 (Student Paper)
"Weak Localisation and Scattering Mechanisms in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs Mesoscopic Wires," by E.L. Carpi, M. Van Hove and M. Van Rossum, Interuniversity Microelectronics Centre (IMEC), Kapeldreef 75, B 3001 Leuven, Belgium
11:00AM, H8
"Electronic Raman Scattering of Modulation Doped Quantum Well Wires and Dots," by P.D. Wang, Y.P. Song, C.M. Sotomayor Torres and M.C. Holland, Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK; D.J. Lockwood and P. Hawrylak, Institute of Microstructural Science, National Research Council, Ottawa K1A OR6, Canada
11:20AM, H9
"Electron Transport in the Regular Array of Quantum Dots," by S.G. Romanov*, I. Larkin and C.M. Sotomayor Torres, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8QQ, UK. *Permanent affiliation: A.F. Ioffe Physical Technical Institute, St. Petersburg, Russia
11:40AM, H10
Late News
8:20AM, I1
"Carbon Doped P-type AlGaAs/InAs Superalloy by Atmospheric Pressure Metalorganic Chemical Vapor Deposition," by N. Pan, J. Elliott, H. Hendriks and D. Lee, Raytheon Research, 131 Spring Street, Lexington, MA 02173
8:40AM, I2
"Carbon Doping of GaAs with TMAs by Metalorganic Vapor Phase Epitaxy in a High Speed Rotating Disk Reactor," by M.A. McKee, A.G. Thompson, M. Everett, E. Armour and R.A. Stall, EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
9:00AM, I3
"On the Impact of Hydrogen on Carbon-Doping of In0.47Ga0.53As," by A. Lindner, W. Prost, A. Wiersch, Q. Liu, F. Scheffer and F.J. Tegude, Gerhard-Mercator-University Duisburg, Sonderforschungsbereich SFB 254, Solid-State Electronics Department, D-47057 Duisburg, Germany; E. Kuphal, Deutsche Telekom Research Institute, D-64295 Darmstadt, Germany
9:20AM, I4 (Student Paper)
"Oxygen-Based Deep Levels Incorporation in Metalorganic Vapor Phase Epitaxy InP," by J.W. Huang and T.F. Kuech, Department of Chemical Engineering, University of Wisconsin-Madison, Madison, WI 53706
9:40AM, I5
"Similarities in the Photoluminescence Properties of Oxygen-doped GaAs and Nominally Undoped AlGaAs," by Michael Ryan, Jen-Wu Huang, Thomas F. Kuech and Kevin L. Bray, University of Wisconsin-Madison, Department of Chemical Engineering, 1415 Johnson Drive, Madison, WI 53706-1691
10:20AM, I6 (Student Paper)
"Hetero- and Homoepitaxial Growth of InAs and GaAs Thin-Films on (111)B GaAs Substrates via Metalorganic Chemical Vapor Deposition," by R.E. Welser, L.J. Guido, M. Amman and M.A. Reed, Center for Microelectronic Materials and Structures, Yale University, P.O. Box 208284, New Haven, CT 06520-8284; N. Pan, Raytheon Research, 131 Spring Street, Lexington, MA 02173; K.C. Hsieh, Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana, IL 61801
10:40AM, I7 (Student Paper)
"Growth of AlAs and (AlAs)n(GaAs)n Superlattices by Atomic Layer Epitaxy Using Ethyldimethylamine Alane as a New Al Source," by S. Hirose, N. Kano, K. Hara, H. Munekata and H. Kukimoto, Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan; J. Yoshino, Dpeartment of Physics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
11:00AM, I8
"(InAs)m(GaAs)m Short Period Superlattices Grown by LP-MOCVD," by Dae Konoh, Sahn Nahm, Kyoung Soo Seo, HeungRo Choo, Hong Man Kim and Hyoung-Moo Park, Division of Semiconductor, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600, Republic of Korea
11:20AM, I9
Late News
11:40AM, I10
Late News
8:20AM, J1
"Degradation of Oxides Resulting from Exposure to Silicon Epitaxial Processes," by C.C. Hobbs, M.C. Ozturk and J.J. Wortman, North Carolina State University, ECE Dept., Box 7911, Raleigh, NC 27695
8:40AM, J2
"An Accurate Monte Carlo Model for Arsenic Implants into (100) Single-Crystal Silicon," by S.-H Yang, S. Morris, S. Tian, K. Parab, and A. Tasch, PRC/MER 2.606E, University of Texas at Austin, TX 78712
9:00AM, J3
"The Effect of Dose Rate on Ion Implanted Impurity Profiles in Silicon," by S. Tian, S.-H. Yang, S. Morris, K. Parab and A.F. Tasch, Mail Code R9950, MER 2.606E, The University of Texas at Austin, Austin, TX 78712; D. Kamenitsa, Eaton Corp., Austin, TX 78758; R. Reece, B. Freer and R.B. Simonton, Eaton Corp., Beverly, MS 01915; C. Magee, Evans East, Plainsboro, NY 08536
9:20AM, J4
"Rapid Thermal Processing of Dual Poly-Si Gates for Submicron CMOS Technology," by J. Bevk, M. Furtsch, G.E. Georgiou, K.S. Krisch, D.M. Boulin, C.S. Rafferty and M.R. Pinto, AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NY 07974
9:40AM, J5
"Microscopically Inhomogeneous Crystal Quality Induced by Si Ion Implantation and Subsequent RTA in GaAs/InGaP/n+InGaAs Epilayers," by Kazuo Watanabe, Fumiaki Hyuga, Hajime Yamazaki and Takumi Nittono, NTT LSI Laboratories; Hidetoshi Takaoka, NTT Interdisciplinary Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243-01 Japan
10:20AM, J6
"P-type Ion Implantation Doping of Al0.75Ga0.25Sb for GaSb-based FETs," by J.C. Zolper, J.F. Klem and A.J. Howard, MS 0603/Dept 1322, P.O. Box 5800, Sandia National Laboratories, Albuquerque, NM 87185-0603
10:40AM, J7
"A Bi-Level Interconnect Process Technology for Implementing Thermal Shunt into the Fabrication of Heterojunction Bipolar Transistors and Power Monolithic Microwave Integrated Circuits," by S.C. Wang, L.W. Yang, K.C. Hwang, D.W. Endres and D.P. Smith, Martin Marietta Laboratories Syracuse, EP-3, Electronic Park, Syracuse, NY 13221
11:00AM, J8
"Passivation of Surface States on GaAs and InP Based Quantum Structures by a Silicon Interface Control Layer Technique," by Hideki Hasegawa, Satoshi Kodama, Kengo Ikeya, Hajime Fujikura and Tamotsu Hashizume, Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University, Sapporo 060, Japan
11:20AM, J9
"Fabrication of Dry-Etched Mirrors in GaAs-Based and InP-Based Lasers Using Chemically-Assisted Ion-Beam Etching at Low Temperatures," by R.E. Sah, J.D. Ralston, J. Daleiden, K. Eisele, E.C. Larkins, S. Weisser and J. Fleissner, Fraunhofer-Institut fur Angewandte Festkorperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
11:40AM, J10
"Nanoscale Patterning of SiO2 by Electron Beam Exposure of Monolayer Resists," by John Allgair, Angela Jenkins-Gray, Maroun Khoury, David K. Ferry, Michael N. Kozicki and Thomas K. Whidden, Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206
8:20AM, K1 (Student Paper)
"Interface Structure in Arsenide/Phosphide Heterostructures Grown by Gas-Source MBE and Low-Pressure MOVPE," by A.Y. Lew, C.H. Yan, R.B. Welstand, J.T. Zhu, C.W. Tu, E.T. Yu and P.K.L. Yu, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0407, La Jolla, CA 92093-0407
8:40AM, K2
"Morphological Instabilities on Exactly Oriented and Vicinal GaAs(001) Surfaces During MBE," by R. Hey, M. Wassermeier, J. Behrend, L. Daweritz and K. Ploog, Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, D-10117, Germany
9:00AM, K3 (Student Paper)
"Oxide Nucleation and Oxidation-Induced Etching in the Roughening Regime on Si(001)-(2x1) Surfaces: UHV-STM Studies and Monte Carlo Simulations," by J.V. Seiple, C. Ebner and J.P. Pelz, The Ohio State University, 174 W. 18th Ave., Columbus, OH 43210
9:20AM, K4 (Student Paper)
"Novel Step Structure and Surface Cleaning of SiGe (001) Layers Under Tensile Strain as Observed by Ultra High Vacuum (UHV) Scanning Tunneling Microscopy (STM)," by D.E. Jones and J.P. Pelz, The Ohio State University, Columbus, OH 43210; Y.H. Xie, P.J. Silverman, G.H. Gilmer, AT&T Bell Laboratories, Murray Hill, NJ 07974
9:40AM, K5
"Near-field Optical Characterization of the Photoluminescence from Partially Ordered GaInP2," by D.J. Arent, K.A. Bertness and J.M. Olson, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401; M.J. Gregor, P.G. Blome, S. Grosse and R.G. Ulbrich, IV. Physikalisches Institut, Univ. Gottingen, D-37073, Gottingen, Germany; J. Feldmann, P. Grossmann, W. Stolz and E.O. Gobel, FB Physik and Zentrum fur Materialwissenschaften, University of Marburg, D-35032 Marburg, Germany
10:20AM, K6
"AlInAs Band Gap Modulation Evidenced by Optical Measurements," by E. Bearzi, T. Benyattou and G. Guillot, LPM (URA CNRS 358) INSA DE LYON, Bat. 502, 69621 Villeurbanne Cedex, France; J.C. Harmand, CNET Bagneux (France Telecom) 96 ave. Henri Ravera, 92220 Bagneux Cedex, France; J. Meddeb and M. Pitaval, DPM (URA CNRS 172) Universite Lyon 1, 69622 Villeurbanne Cedex, France; M. Oustric and M. Gendry, LEAME (URA CNRS 848) Ecole Centrale de Lyon, 69131 Ecully Cedex, France
10:40AM, K7
"Characteristics of Three Terminal Device made by STM Nano-Fabrication Process," by Kazuhiko Matsumoto and Masami Ishii, Electrotechnical Laboratory MITI JAPAN; Kazuhito Segawa, Industrial Research Institute of Ishikawa; Yasushi Oka, Tokai University 1-1-4, Umezono, Tsukuba-shi, Ibaraki-kenn, 305, Japan
11:00AM, K8
"Quantitative Scanning Capacitance Microscopy Analysis of Two-Dimensional Dopant Concentrations at Nanoscale Dimensions," by A. Erikson and L. Sadwick, Department of Electrical Engineering, University of Utah, Salt Lake City, UT 84112; G. Neubauer, Intel Corporation, Materials Technology Department, Santa Clara, CA 95052; J. Kopanski, National Institute of Standards and Technology, Gaithersburg, MD 20899; M. Rodgers and D. Adderton, Digital Instruments, Santa Barbara, CA 93103
11:20AM, K9
"Comparative Scanning-Tunneling-Microscopy Investigations of Nanostructures Prepared by Different Techniques," by E. Hartmann, P. Radojkovic and M. Schwartzkopff, Physics Department E16, Technical University of Munich, D-85748 Garching, Germany; P. Marquardt, Fraunhofer Institute for Solid State Technology, Hansastr. 27d, D-80686 Munich, Germany
8:20AM, L1 (Invited)
"New Transparent Conducting Oxide with Spinel- or Pyrochlore-Structure," by H. Kawazoe, Research Laboratory of Engineering Materials, Toyko Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226, Japan; H. Hosono and N. Ueda, Institute for Molecular Science, Myodaiji, Okazaki 444, Japan
9:00AM, L2 (Invited)
"Pulsed Laser Deposition and In-Situ Study of Ultrathin Indium Tin Oxide," by S.W. Sun, H.C. Huang and H.S. Kwok, Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong
9:40AM, L3
"Magnetron Sputtered Transparent Conducting CdO Thin Films," by K. Gurumurugan, D. Mangalaraj and Sa.K. Marayandess, Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046, India
10:20AM, L4 (Invited)
"High-Performance, Transparent Conductors Based on Cadmium Oxide," by T.J. Coutts, X. Wu, W. Mulligan and J.M. Webb, National Renewable Energy Laboratory, Golden, CO 80215
11:00AM, L5
"Optical and Electrical Characterization of Transparent Conducting Oxide Thin Films Deposited By Laser Ablation," by Jeanne M. McGraw, Philip A. Parilla, Jeff Alleman, Douglas L. Schulz, Xuanzhi Wu, David S. Ginley, Timothy J. Coutts Photovoltaic Devices Branch, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
11:20AM, L6 (Student Paper)
"Structural and Electronic Properties of Epitaxial In2O3 Films Grown on (001) YSZ by Pulsed Laser Deposition," by E.J. Tarsa, J.H. English, and J.S. Speck, Materials Department, University of California, Santa Barbara, CA 93106
11:40AM, L7 (Student Paper)
"Reversible, Photoinduced Changes in the Electronic and Optical Properties of Amorphous Indium Oxide," by B. Claflin, B. Pashmakov, H. Fritzsche, James Franck Institute and Department of Physics, The University of Chicago, 5640 South Ellis Ave., Chicago, IL 60637
1:30PM, M1
"Microstructure of GaN Epitaxy on (alpha-6H) SiC," by F.A. Ponce and B.S. Krusor, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304; J.S. Major, Jr., W.E. Plano, and D.F. Welch, SDL, Inc., 80 Rose Orchard Way, San Jose, CA 95134
1:50PM, M2
"Transmission Electron Microscopy Investigation of Structural Defects in alpha-GaN Films Grown on Sapphire by OMVPE," by W. Qian and M. Skowronski, Dept. of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213; K. Doverspike, L.B. Rowland, and D.K. Gaskill, Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C. 20375
2:10PM, M3
"High Electron Mobility in Two Dimensional Electron Gas in AlGaN/GaN Heterostructures," by M.S. Shur and B.L. Gelmont, Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903; M. Asif Khan, and J.. Kuznia, APA Optics, APA Inc., 2950 N.E. 84th Lane, Blaine, MN 55449
2:30PM, M4 (Student Paper)
"Photoluminescence Studies of AlGaN/GaN Superlattices Grown on SiC and Sapphire Substrates," by David A. Loeber and Neal G. Anderson, Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003; Joan M. Redwing and Michael A. Tischler, Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
2:50PM, M5
"Magnetic Resonance Studies of GaN Based Light Emitting Diodes," by W.E. Carlos, Naval Research Laboratory, Washington, D.C. 20375; and S. Nakamura, Nichia Chemical Industries, Ltd., Tokushima 774, Japan
3:30PM, M6 (Student Paper)
"Ohmic and Schottky Contacts on n-GaN Based on Pd Metallization," by A.T. Ping and I. Adesida, Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801; and M. Asif Khan, APA Optics, Inc., Blaine, MN 55449
3:50PM, M7 (Student Paper)
"High Barrier Height GaN Schottky Diode: Pd/GaN and Pt/GaN," by Lei Wang, Marshall I. Nathan, Philip I. Cohen, and P. Paul Ruden, Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455; Tian-Hoe Lim, Department of Material Science and Engineering, University of Minnesota, Minneapolis, MN 55455; and M. Asif Khan and Qisheng Chen, APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, MN 55449
4:10PM, M8
"Schottky Barriers on n-GaN Grown on SiC," by E.V. Kalinina, N.I. Kuznetsov, Cree Research Eastern European Division and A.F. Ioffe Institute, 26 Polytechnicheskaya Street, St. Petersburg, 194021 Russia; and V.A. Dmitriev, K. Irvine, and C.H. Carter, Jr., Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
4:30PM, M9
"Reactive Ion Etching of GaN Using CHF3/Ar and C2ClF5/Ar Plasmas," by Heon Lee, David B. Oberman, and James S. Harris, Jr., Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
4:50PM, M10
"Chemically Assisted Ion Beam Etching of Anisotropic Structures in Gallium Nitride Using HCl Gas," by I. Adesida and A.T. Ping, Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801; and M. Asif Khan, APA Optics, Inc., Blaine, MN 55449
1:30PM, N1
"Interface Roughness Scattering in Thin, Undoped GaInP/GaAs Quantum Wells," by W.C. Mitchel, S. Hegde, Wright Laboratory, WL/MLPO, 3005 P St., Wright Patterson AFB, OH 45433-7707; Said Elhamri, M. Ahoujja, R.S. Newrock, Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011, M. Razeghi and Matthew Erdtmann, Center for Quantum Devices, Northwestern University, Evanston, IL 60208
1:50PM, N2 (Student Paper)
"Effect of Gamma-X Coupling on the Carrier Lifetime of InGaP/InAlP Multiple Quantum Wells," by O. Buccafusca, M.C. Marconi, D. Patel, C.S. Menoni, M. Prasad, J.J. Rocca and G.Y. Robinson, Optoelectronic Computing System Center and Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
2:10PM, N3 (Student Paper)
"Effect of Substrate Misorientation on the Formation of GaxIn1-xP Lateral Quantum Wells," by A.C. Chen, A.M. Moy, L.J. Chou, K.C. Hsieh and K.Y. Cheng, Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
2:30PM, N4 (Student Paper)
"Photoluminescence Properties of AlGaP/GaP Superlattices," by Y. Nabetani, A. Wakahara and A. Sasaki, Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
2:50PM, N5 (Student Paper)
"Growth and Optical Properties of Strained (GaP)n(AlP)n Short Period Superlattices," by K. Shiraishi, J. Kitamura, K. Hara, H. Munekata and H. Kukimoto, Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan
3:30PM, N6
"Extremely Strong and Sharp Photoluminescence Lines from Nitrogen Atomic-layer-doped GaAs and AlGaAs/GaAs Single Quantum Wells," by Toshiki Makimoto and Naoki Kobayashi, NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243-01 Japan
3:50PM, N7 (Student Paper)
"The Growth and Properties of GaxIn1-xAs Quantum Wire Heterostructures Prepared by the Strained-Induced Lateral-Layer Ordering Process," by S.T. Chou, K.Y. Cheng and K.C. Hsieh, Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
4:10PM, N8 (Student Paper)
"Evidence of Strain Regimes in In0.2Ga0.8As/GaAs Quantum Wires," by E.S. Tentarelli, J.D. Reed, Y.-P. Chen, W.J. Schaff and L.F. Eastman, Department of Electrical Engineering, 429 Phillips Hall, Cornell University, Ithaca, NY 14853-5401
4:30PM, N9
Late News
4:50PM, N10
Late News
1:30PM, O1 (Invited)
"A Risky Procedure for Generating Reliability Estimates," by F.R. Nash, AT&T Bell Laboratories, 600 Mountain Ave., Room 7C-401, P.O. Box 636, Murray Hill, NJ 07974
2:10PM, O2
"Improved Reliability of Visible AlGaAs-InAlGaP Light Emitting Diodes with Native Oxide Surface Passivation," by Chun Lei, Mark R. Keever, and Fred A. Kish, Hewlett-Packard Company, 370 W. Trimble Road, San Jose, CA 95131; Tim A. Richard (now at SDL, Inc., San Jose, CA 95134) and Nick Holonyak, Jr., Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
2:30PM, O3 (Student Paper)
"The Effect of Dislocation Formation on the Performance of High Indium Content AlGaAs/InGaAs/GaAs Pseudomorphic Heterostructure Field Effect Transistors by OMVPE," by Barbara E. Landini and Kei May Lau, Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA 01003
2:50PM, O4 (Student Paper)
"Carrier Dynamics in ZnCdSe/ZnSe Quantum-Well Structures," by Li Wang, J.H. Simmons, M.H. Joen, and R.M. Park, Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
3:30PM, O5 (Invited)
"Defects and Degradation in II-VI Blue-Green Lasers and LEDs," by S. Guha, G.M. Haugen, T.J. Miller, K.K. Law, B.J. Wu, M.A. Hasse, and G.D. U'Ren, 3M Corporate Research Labs, 3M Center, 201-1N-35, St. Paul, MN 55144-1000; and J. Petruzzello, Phillips Laboratories, 345 Scarborough Road, Briarcliff Manor, NY 10510
4:10PM, O6
"Defect Structure in ZnSe Based II-VI Semiconductor Blue-Green Laser Structures and Their Degradation," by G.C. Hua, D.C. Grillo, M.D. Ringle, J. Han, and R.L. Gunshor, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907; M. Hovinen (presently at Tampere University of Technology, P.O. Box 589, Tampere, Finland) and A.V. Nurmikko, Division of Engineering and Department of Physics, Brown University, Providence, RI 02912; and N. Otsuka, Department of Materials Science, Japan Advanced Institute of Science and Technology, Hokuriku, Nomigun, Ishikawa 923-12, Japan
4:30PM, O7
"Structural Study of Degraded ZnMgSSe Blue Light Emitters," by K. Nakano, S. Tomiya, M. Ukita, H. Yoshida, S. Itoh, E. Morita, M. Ikeda, and A. Ishibashi, Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
4:50PM, O8
"Observation of [100] and [010] Dark Line Defects in Optically Degraded ZnSSe-Based LEDs by Transmission Electron Microscopy," by L. Salamanca-Riba and L.H. Kuo, Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742-2115
1:30PM, P1 (Student Paper)
"Band-Edge Photoluminescence in Pseudomorphically Strained Si1-x-yGexCy Layers on Si (100) Substrates," by A. St. Amour, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544; J.C. Sturm, Institut fur Halbleitertechnik, University of Stuttgart, Stuttgart, Germany (presently at Department of Electrical Engineering, Princeton University, Princeton, NJ 08544); and K. Brunner and J. Weber, Max-Planck Institute for Solid-State Physics, Stuttgart, Germany
1:50PM, P2 (Student Paper)
"Optical Properties of Ge1-yCy Alloys," by B. Orner, A. Kahn, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, P. Berger, and J. Kolodzey, Electrical Engineering Department, 140 Evans Hall, University of Delaware, Newark, DE 19716; and R.G. Wilson, Hughes Research Lab., 3011 Malibu Canyon Road, Malibu, CA 90265
2:10PM, P3
"Deposition and Characterization of Delta-Doped Layers in Silicon Using Self-Saturating Adsorption of PH3 and B2H6 on Si(100)," by A. Mahajan, R. Gupta, J. Ekerdt, A. Tasch, and S. Banerjee, Microelectronics Research Center, J.J. Pickle Research Campus, University of Texas at Austin, Austin, TX 78712
2:30PM, P4
"The Effect of Post-Growth Cooling Rate on the Defect Structure in MBE-Grown Buried Layers of Si(1-x)Ge(x) on Si Substrates," by M. Fatemi, P.E. Thompson, and M.E. Twigg, Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375; and J. Chaudhuri, Department of Mechanical Engineering, Wichita State University, Wichita, KS 67208
2:50PM, P5
"Elastic Strain in Dry Etched Si/Si1-xGex Quantum Dots," by Y.S. Tang and C.M. Sotomayor Torres, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, U.K.; S. Nilson, B. Dietrich, and W. Kissinger, Institut fur Halbleiterphysik GmbH, D-15204 Frankfurt (Oder) Germany; T.E. Whall and E.H.C. Parker, Department of Physics, University of Warwick, Coventry CV4 7AL, U.K.; and H. Presting and H. Kibbel, Daimler Benz AG, Research Center, D-89081 Ulm, Germany
3:30PM, P6 (Student Paper)
"Inter-facet Mass Transport in Selective Epitaxial Growth of Si/SiGe Nanostructures by Si2H6-Ge Molecular Beam Epitaxy," by Qi Xiang, Shaozhong Li, Dawen Wang, and Kang L. Wang, Device Research Laboratory, Department of Electrical Engineering, University of California-Los Angeles, Los Angeles, CA 90024-1600
3:50PM, P7 (Student Paper)
"Growth of Lateral Limited SiGe Films on the Si(100) Mesa Substrate by RTP/VLP-CVD," by Rong Zhang, Hongbin Huang, Yi Shi, Shulin Gu, S.D. Hu, Kai Yank, Ronghua Wang, Shunming Zhu, and Youdou Zheng, Department of Physics, Nanjing University, Nanjing 210008, China
4:10PM, P8
"A 4 ML Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge MBD Growth on Boron Preadsorbed Si (111) Surface," by Y. Kumagai, K. Ishimoti, R. Mori, F. Hasegawa, and M. Kawabe, Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
4:30PM, P9
"Effects of Electron Showering and Source Ion Bombardment on Deposition of Polycrystalline Ge and Si1-xGex Films on SiO2 Using Molecular Beam Epitaxy," by Sun Jin Yun, Seung-Chang Lee, and Jae-Jin Lee, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, 305-600, Korea
1:30PM, Q1 (Student Paper)
"GaInAsP Grown on InP by Solid Source Molecular Beam Epitaxy," by C.C. Wamsley, G.E. Kohnke, M.W. Koch, and G.W. Wicks, The Institute of Optics, University of Rochester, Rochester, NY 14627
1:50PM, Q2
"Growth of Abrupt AlInP/GaAs Heterointerfaces by Gas Source Molecular Beam Epitaxy," by H.C. Kuo and Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08855; J.M. Kuo and J.Y. Cheng, AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070; Y.C. Wang, and W.E. Mayo, Rutgers University, Department of Mechanics and Materials Science, Piscataway, NJ 08855
2:10PM, Q3 (Student Paper)
"Gas-Source Molecular Beam Epitaxial Growth and Characterization of InGaAs/InGaAsP Quantum Well Structures," by W.G. Bi and C.W. Tu, Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92037-0407
2:30PM, Q4
"GaInP Grown by CBE Using Uncracked Trisdimethylaminophosphine," by H.H. Ryu, C.W. Hill. G.B. Stringfellow, and L.P. Sadwick, College of Engineering, The University of Utah, Salt Lake City, UT 84112; and R.W. Gedridge, Jr., Naval Air Warfare Center Weapons Division, China Lake, CA 93555
2:50PM, Q5 (Student Paper)
"Growth, Doping, and Etching of GaAs Using Tris-dimethylaminoarsenic," by H.K. Dong, N.Y. Li, W.S. Wong, and C.W. Tu, Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92037-0407
3:30PM, Q6
"A New CuPt-Type Ordered Structure in the <111>A Directions in Al0.5In0.5P and its Relation to Surface Reconstruction During MBE Growth," by Akiko Gomyo, Masayoshi Sumino, Isao Hino, and Tohru Suzuki, Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki, 305, Japan
3:50PM, Q7
"The Role of Surface Reconstruction on Spontaneous Ordering in III-V Alloys," by S.B. Zhang, S. Froyen, and Alex Zunger, National Renewable Energy Laboratory, Golden, CO 80401
4:10PM, Q8
"Comparison of Heteroepitaxial Growth Using Hydride and Solid Sources: Atomic Scale Characterization of the Interaction of As4, AsH3 and PH3 with Si Surfaces," by R.D. Bringans, L. Kipp (present address: Inst. fur Experimental Physik, University of Kiel, Germany), D.K. Biegelsen, L.E. Schwartz, and J.E. Northrup, Xerox Palo Alto Research Center, Palo Alto, CA 94304
4:30PM, Q9
"In-Situ Hydrogen Radical Surface Processing of GaInAsP and AlGaInAs Prior to MBE Regrowth," by A. Hase (on leave from: Universitat Stuttgart, Pfaffenwaldring 57, D-70569 Stuttgart, Germany), P. Harde, and H. Kunzel, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-10587 Berlin, Germany; and U. Griebenow, Technische Universitat Berlin, Institut fur Festkorperphysik, Hardenbergstr. 36, D-10623 Berlin, Germany
1:30PM, R1
"Real-time in situ Thickness Control of Fabry Perot Cavities in MBE by Ellipsometry," by C.H. Kuo, M.C. Boonzaayer and G.N. Maracas, Department of Electrical Engineering, Center for Solid State Electronic Research, Arizona State University, Tempe, AZ 85287-6206
1:50PM, R2
"Implementation Issues for the Growth of AlAs/GaAs Distributed Bragg Reflectors Using Real-Time Pyrometric Interferometry Monitoring and Control," by Y. Li, D. Sato, X Zeng and H.P. Lee, Department of Electrical and Computer Engineering, University of California, Irvine, Irvine, CA 92717
2:10PM, R3
"In Situ Growth Monitoring of InGaAs Composition on InP," by F.G. Celii, Y.-C. Kao and H.-Y. Liu, Corporate Research Laboratories, Texas Instruments, Inc., M.S. 147, P.O. Box 655936, Dallas, TX 75265
2:30PM, R4 (Student Paper)
"A Composition-Dependent Model for the Complex Dielectric Function of In1-xGaxAsyP1-y Lattice-Matched to InP," by Leonard Kamlet and Fred L. Terry, Jr., EECS-DTM/111 DTM Bldg., University of Michigan, 2360 Bonisteel Blvd., Ann Arbor, MI 48109-2108
2:50PM, R5
"Segregation Effects Observed by Reflectance Difference Spectroscopy During Monolayer Deposition in InAs-GaAs Heterostructures by Atomic Layer Epitaxy," by R. Ares, C.A. Tran and S.P. Watkins, Department of Physics, Simon Fraser University, Burnaby, BC, Canada, V5A 1S6
3:30PM, R6 (Student Paper)
"Real-Time Measurement of Silicon/Germanium Epitaxy Kinetics By Femtosecond Second Harmonic Generation," by N.M. Russell, J.I. Dadap, X.F. Hu, M.C. Downer and J.G. Ekerdt, Science and Technology Center for the Synthesis, Growth and Analysis of Electronic Materials, University of Texas at Austin, Austin, TX 78712
3:50PM, R7 (Student Paper)
"In-Situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film Etch Rate Determination During Reactive Ion Etching," by Tyrone E. Benson, Leonard Kamlet, Pete Klimecky, Fred Terry, Jr., EECS-DTM/112 DTM Bldg., University of Michigan, 2360 Bonisteel Blvd., Ann Arbor, MI 48109-2108
4:10PM, R8 (Student Paper)
"Real-time Multivariable Control of PECVD Silicon Nitride Deposition Using Quadrupole Mass Spectrometry," by T.J. Knight, D.W. Greve, X. Cheng, M.S. Gibson and B.H. Krogh, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15232, USA
4:30PM, R9 (Student Paper)
"In-Line Detection of Metal Contamination in Si Wafer Processing," by L.L. Chalfoun, G.J. Norga, H. M'saad, J.J. Lappe, J. Michel and L.C. Kimerling, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
4:50PM, R10
Late News
8:20AM, S1 (Invited)
"Progress in Doping, Morphology, and Polytype Control in SiC Epilayers Grown by CVD," by David J. Larkins, NASA Lewis Research Center, Cleveland, OH 44135
9:00AM, S2
"Correlation of Electrical Properties with Residual Impurities In SiC Grown by Physical Vapor Transport," by G. Augustine, R.C. Glass, H.McD. Hobgood and R.H. Hopkins, Westinghouse Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235; J. Jenny and M. Skowronski, Department of Materials Science and Engineering, Carnegie-Mellon University, Pittsburgh, PA 15213
9:20AM, S3 (Student Paper)
"Generation Mechanisms in 6H-SiC pn Junctions," by Y. Wang, J.A. Cooper, Jr., M.R. Melloch and S.T. Sheppard, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1285; J.W. Palmour and L.A. Lipkin, Cree Research, Inc., Durham, NC
9:40AM, S4 (Student Paper)
"Deep Levels Resulting from Substitutional Vanadium Impurities in SiC," by J.R. Jenny and M. Skowronski, Department of Materials Science and Engineering, Carnegie-Mellon University, Pittsburgh, PA 15215
10:20AM, S5
"Deep Levels in P-Type Bulk 6H-SiC," by W.C. Mitchel, Matthew Roth, A.O. Evwaraye and P.W. Yu, Wright Laboratory, WL/MLPO, 3005 P St., Wright Patterson AFB, OH 45433-7707; S.R. Smith, University of Dayton Research Institute, 300 College Park, Dayton, OH 45469-0178
10:40AM, S6
"Al and N Implantations in 6H-SiC," by J. Gardner, P. Griffiths and M.V. Rao, Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22015; G. Kelner, Naval Research Laboratory, Washington, D.C. 20375
11:00AM, S7 (Student Paper)
"Effect of Annealing Temperature on 1.5 micrometer Photoluminescence at 25 C from Er-Implanted 6H-SiC," by J. Devrajan and A.J. Steckl, University of Cincinnati, Cincinnati, OH 45221-0030; W.J. Choyke, R.P. Devaty and M. Yoganathan, University of Pittsburgh, Pittsburgh, PA 15260; S.W. Novak, Evans East, Plainsboro, NJ 08536
11:20AM, S8 (Student Paper)
"Effect of Substrate Orientation on the Thermally Oxidized 6H-SiC MOS Interface," by J.N. Shenoy, M.K. Das, J.A. Cooper, Jr. and M.R. Melloch, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907; J.W. Palmour, Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
11:40AM, S9 (Student Paper)
"Effect of Anneal Temperature on Determining High Performance Ni-SiC Electrical Contacts," by J.N. Su and A.J. Steckl, University of Cincinnati, Cincinnati, OH 45221-0030; R.L. Moore, Evans East, Plainsboro, NJ 08536
8:20AM, T1
"Growth of P-Type ZnSe by Metalorganic Molecular Beam Epitaxy Using Metal Zn and Dimethylselenide," by J. Suda, M. Tsuka, D. Honda, M. Funato, Y. Kawakami, Sz. Fujita and Sg. Fujita, Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
8:40AM, T2
"A Novel Technique for P-Type Doping of ZnSe," by A.A. El-Emawy, Y. Qiu, A. Osinsky, E. Littlefield and H. Temkin, Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
9:00AM, T3
"Formation of a Thin III-VI Compound Interfacial Layer at ZnTe/ZnSe Heterojunction and Its Effect on Energy Band Discontinuity," by T. Yoshida, T. Nagatake, M. Kobayashi and A. Yoshikawa, Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33 Yoyoi-cho, Inage-ku, Chiba 263, Japan
9:20AM, T4
"DX Centers in II-VI Semiconductors," by Tineke Thio, D.J. Chadi, R.A. Linke and J.W. Bennett, NEC Research Institute, 4 Independence Way, Princeton, NJ, USA; P. Becla, Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, USA
9:40AM, T5
"Role of Cadmium in Enhancing Optical properties and Chlorine Doping of Photoassited OMVPE-Grown ZnSe," by M.R. Gokhale, K.X. Bao, P.D. Healey, J.E. Ayers and F.C. Jain, Dpeartment of Electrical and Systems Engineering, U-157, 260 Glenbrook Rd., University of Connecticut, Storrs, CT 06269-3157
10:20AM, T6
"Growth Modes of ZnSe on GaAs," by A. Osinsky, Y. Qiu, A.A. El-Emawy, E. Littlefield, H. Temkin, Colorado State University, Ft. Collins, CO 80523; N. Faleev, N. Bert and Yu. Musikhin, A.F. Ioffe Physical-Technical Institute, Politechnicheskaya 26, St. Petersburg, 194021, Russia
10:40AM, T7
"Effect of GaAs Surface Pretreatment on Electrical Properties of MBE-ZnSe/GaAs Substrate Interfaces," by Takayuki Sawada, Yuji Yamagata, Kazuaki Imai and Kazuhiko Suzuki, Department of Applied Electronics, Hokkaido Institute of Technology, 7-15-4-1 Maeda, Teine-ku, Sapporo 060, Japan
11:00AM, T8
"Effects of GaAs Buffer Layer and Lattice-Matching on Deep Levels in Zn(S)Se/GaAs Heterostructures," by M. Funato, H. Kitani, Sz. Fujita and Sg. Fujita, Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
11:20AM, T9
"Non-destructive Analysis of Structural Defects in Wide Band Gap II-VI Heterostructures," by M.S. Goorsky and S. Lindo, University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
11:40AM, T10
Late News
8:20AM, U1
"Progress in the Development of Porous Silicon Light Emitters," by P.M. Fauchet, C. Peng, L. Tsybeskov, and K.D. Hirschman, Dept. of Electrical Engineering, University of Rochester, Rochester, NY 14627
8:40AM, U2
"The Relationship Between Oxygen Related Defect Centers in Porous Silicon and Room Temperature Red Photoluminescence," by S.M. Prokes and W.E. Carlos, Code 6864, Naval Research Lab., Washington, D.C. 20375
9:00AM, U3 (Student Paper)
"Process Integration of MOSFETs and Erbium-Doped Silicon Light-Emitting Diodes," by B. Zheng, J. Palm, R. Gupta, A. Agarwal, S.H. Ahn, J. Michel, and L.C. Kimerling, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139; and D.C. Jacobson and J.M. Poate, AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
9:20AM, U4
"Low Temperature Microscopic Device Creation in Si via Fast Electromigration of Li," by Leonid Chernyak, Vera Lyakhovitskaya, and David Cahen, Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
9:40AM, U5
"Studies of White Light Electroluminescence from Si Nanocrystals," by B.S. Sywe, and Y. Lu, Rugters University, Dept. of Electrical and Computer Engineering, Piscataway, NJ 08855; D.C. Morton, R.T. Lareau, and C. Walding, Army Research Laboratory, Ft. Monmouth, NJ 07703; E.W. Forsythe and G.S. Tompa, Structured Materials Industries, Inc., 120 Centennial Avenue, Piscataway, NJ 08854; J. Ott, Stevens Institute of Technology, Dept. of Materials Science and Engineering, Hoboken, NJ 07030; C.R. Gorla, W.E. Mayo, and A. Charos, Rutgers University, Dept. of Mechanics and Materials Science, Piscataway, NJ 08855; B.A. Khan, N.A. Philips Laboratories, Briarcliff Manor, NY 10511; E.A. Whittaker, Stevens Institute of Technology, Physics and Eng. Dept., Hoboken, NJ 07030; F.H. Pollak and D. Yang, Brooklyn College, Dept. of Physics, 2900 Bedford Ave., Brooklyn, NY 11210; and J.B. Khurgin, The Johns Hopkins University, Dept. of Electrical and Computer Eng., Baltimore, MD 21218
10:20AM, U6
"0.3 to 1.7 micrometers High Gain Porous Silicon Photodetector," by Ming-Kwei Lee and Yu-Chu Tseng, Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, China
10:40AM, U7 (Student Paper)
"Characterization of Crystalline and Polycrystalline Silicon Waveguides for Optical Integration and Interconnection," by James S. Foresi, Debra M. Koker, and L.C. Kimerling, Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139
11:00AM, U8 (Student Paper)
"Characterization of GeSi Strained Layer Superlattice for 1.3 micrometers P-I-N Photodetector," by L.M. Giovane, L.C. Kimerling, and E.A. Fitzgerald, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
11:20AM, U9 (Student Paper)
"Electroluminescence from Polymer Blends of Poly(3-n-butyl-p-pyridyl vinylene) and Poly(9-vinylcarbazole)," by C.C. Wu, J. Tian, J.C. Sturm, M.E. Thompson, and R.A. Register, Princeton University, Advanced Technology Center for Photonic and Optoelectronic Materials, Princeton, NJ 08544
11:40AM, U10
Late News
8:20AM, V1
"Heterostructures with Biaxially Compressed InAsSb for Midwave Infrared Emitters," by Steven R. Kurtz and Robert M. Biefeld, Sandia National Laboratories, Albuquerque, NM 87185
8:40AM, V2
"The Growth and Characterization of GaAsSb and AlAsSb Alloys and InAsSb/InGaAs Strained-Layer Superlattices Using Trimethylaminealane, Trisdimethylaminoantimony, and Triethylgallium," by R.M Biefeld and S.R. Kurtz, Sandia National Laboratories, Albuquerque, NM 87185
9:00AM, V3
"Epitaxial Growth of AlGaSb Using Tritertiarybutylaluminum as a New Organometallic Source," by C.A. Wang and M.C. Finn, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108; S. Salim and K.F. Jensen, Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139; and A.C. Jones, Epichem Limited, Power Road, Bromborough, Wirral, Merseyside L62 3QF, United Kingdom
9:20AM, V4
"Nucleation of Misfit and Threading Dislocations in GaSb Films Grown on GaAs (001) by Molecular Beam Epitaxy," by W. Qian, M. Skowronski, and M. De Graef, Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213; and R. Kaspi, Wright Laboratory (WL/ELRA), Wright Patterson AFB, OH 45433
9:40AM, V5
"The Impact of Buffer Layer on Interface Roughness in InAs/GaSb Superlattices," by M.E. Twigg, B.R. Bennett, and B.V. Shanabrook, Electronics Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375-5347
10:20AM, V6 (Student Paper)
"Heterojunction Photodiodes Using the InAs/GaInSb Strained Layer Superlattice," by J.L. Johnson, L.A. Samoska, A.C. Gossard, and J.L. Merz, Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106; and M. Jack, G. Chapman, B. Baumgratz, and K. Kosai, Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
10:40AM, V7
"Molecular Beam Epitaxy of In0.74Ga0.26As on InP for Near-Infrared Detectors," by W.-Y. Hwang, R. Kochhar, M. Micovic, T.S. Mayer, and D.L. Miller, Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802; and S.M. Lord, Department of Electrical Engineering, Bucknell University, Lewisburg, PA 17837
11:00AM, V8
"Growth and IR Normal Incidence Absorption of Heavily C-Doped GaAs/AlGaAs Multi-Quantum-Well Structures," by E. Mao, B.W. Kim, Z.H. Lu, S.A. Dickey, and A. Majerfeld, Department of Electrical and Computer Engineering, CB 425, University of Colorado, Boulder, CO 80309 USA
11:20AM, V9 (Student Paper)
"Photoreflectance Study of CdTe(111)B/Si(100)," by L.A. Almeida, C.C. Kim, Y.P. Chen, and S. Sivananthan, University of Illinois, Microphysics Laboratory, Physics Department (M/C 273), 845 W. Taylor St., Chicago, IL 60607-7059
11:40AM, V10
"Photoluminescence of Erbium-Doped III-V Semiconductors under High Pressure," by Thomas D. Culp, Uwe Hommerich, Joan M. Redwing, Thomas F. Kuech and Kevin L. Bray, University of Wisconsin-Madison, Department of Chemical Engineering, Madison, WI 53706; Bruce W. Wessels, Northwestern University, Department of Materials Science and Engineering, Evanston, IL 60208
8:20AM, W1
"Electron Microscopy Characterization of Phase Segregation in Copper Indium Selenide (Cu0.85In1.05Se2)," by M. Hornung and K.W. Benz, Kristallographisches Institut, Universitat Freiburg, Hebelstr. 25, D-79104, Freiburg, Germany; L. Margulis, Department of Material and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel; and D. Schmid and H.W. Schock, Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
8:40AM, W2
"Compositional, Morphological, and Electrical Inhomogeneities in Photovoltaic Quality CuIn1-xGaxSe2 Thin Films," by Andrew M. Gabor, David Albin, John R. Tuttle, Rick Matson, Amy Schwartzlander, David Niles, and Rommel Neufi, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401-3393
9:00AM, W3
"High Resolution X-ray Diffraction Study of Heteroepitaxial CuInSe2 Growth on GaAs by Molecular Beam Epitaxy," by P. Fons, S. Niki, D.J. Tweet, A. Yamada, Y. Okada, Y. Makita, and H. Oyanagi, Electrotechnical Laboratory MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
9:20AM, W4
"Optical Properties of As-Grown and Post-Annealed CuInSe2 Grown by Molecular Beam Epitaxy," by S. Niki, H. Shibata, P.J. Fons, A. Yamada, A. Obara, and Y. Makita, Electrotechnical Laboratory MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan; and T. Kurafuji, S. Chichibu, and H. Nakanishi, Science University of Tokyo, Noda, Chiba 278, Japan
9:40AM, W5
"ZnTe as a Back Contact Material in Polycrystalline Thin Film CdTe Solar Cells," by L. Feng, D. Mao, Y. Zhu, R. Collins, D.L. Williamson, and J.U. Trefny, Department of Physics, Colorado School of Mines, Golden, CO 80401
10:20AM, W6
"Passivation of Ga0.5In0.5P," by Brian M. Keyes, Sarah R. Kurtz, K.A. Bertness, R.K. Ahrenkiel, and J.M. Olson, National Renewable Energy Laboratory, Golden, CO 80401
10:40AM, W7
"Slow Dangling Bond Relaxation and Metastability in p-Type Hydrogenated Amorphous Silicon," by Richard S. Crandall, Martin W. Carlen, Klaus Lips, and Yueqin Xu, National Renewable Energy Laboratory, Golden, CO 80401
11:00AM, W8
"Molecular Dynamics Simulations of Hydrogenated Amorphous Silicon Thin Film Growth," by Tatsuya Ohira, Advanced Technology Research Center, Technical Headquarters, Mitsubishi Heavy Industries, Ltd., 8-1 Sachiura, 1-chome, Kanazawa-ku, Yokohama 236, Japan; and Yoshiaki Takeuchi, Nagasaki Research and Development Center, Mitsubishi Heavy Industries, Ltd., 5-717-1, Fukahori-Machi, Nagasaki, 851-03, Japan
11:20AM, W9
"Minority Carrier Lifetime and Microdefects in Silicon Crystals and Multicrystalline Ingots Grown in Mixed Nitrogen/Argon Ambients," by T.F. Ciszek, T.H. Wang, R.W. Burrows, M.I. Symko, and J.D. Webb, National Renewable Energy Laboratory, Golden, CO 80401
1:30PM, X1
"MBE Growth of ZnCdMgSe Quaternary Alloys and ZnCdMgSe/ZnCdSe Quantum Wells on InP Substrates," by L. Zeng, A. Cavus, N. Dai and M.C. Tamargo, Department of Chemistry, The City College of CUNY, New York, NY 10031; W. Krystek and F. H. Pollak, Department of Physics, Brooklyn College of CUNY, Brooklyn, NY 11210; N. Bambha and F. Semendy, Army Research Laboratory, Fort Belvoir, VA 22060
1:50PM, X2 (Student Paper)
"Band Offset of MnS/ZnSe/GaAs by XPS," by L. Wang and S. Sivananthan, Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St. (Room 2236 SES), Chicago, IL 60607-7059; R. Sporken and R. Caudano, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Facultes Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61, 5000 Namur (Belgium)
2:10PM, X3 (Student Paper)
"Characterization of ZnMnSSe Quaternary Alloys for Visible Light Emitting Devices," by J.W. Hutchins and B.J. Skromme, Department of Electrical Engineering and Center for Solid State Electronics Research; B. Parameshwaran, Department of Materials Engineering; David J. Smith, Department of Physics and Center for Solid State Science, Arizona State University, Tempe, AZ 85287-5706; S. Sivananthan, Physics Department, University of Illinois at Chicago, Chicago, IL 60607-7059
2:30PM, X4
"MOCVD Selective Area Growth of ZnSe for Low Loss Optical Waveguides in AlGaInP Visible-Light Lasers," by Yoshitake Kato and Akira Usui, Fundamental Res. Labs.; Ryuji Kobayashi, Hitoshi Hotta and Kenichi Kobayashi, Opto-Electronics Res. Labs, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki-City, Kanagawa 216, Japan
2:50PM, X5
Late News
3:30PM, X6
"Lateral Quantization Effects in the Room Temperature Emission Spectra of CdZnSe/ZnSe Quantum Wires," by M. Illing, G. Bacher, T. Kümmell, A. Forchel, Technische Physik; B. Jobst, D. Hommel, G. Landwehr, Experimentelle Physik III, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany
3:50PM, X7
"Optical Properties and Thermal Transport Of Excitons in (Zn,Cd)Se-ZnSe Heterostructures," by L. Aigouy, F. Liaci, B. Gil, O. Briot, T. Cloitre, N. Briot, R.L. Aulombard and M. Averous, Universite de Montpellier II - Groupe d'Etude des Semiconducteurs, Case Courrier 074 - Place Eugene Bataillon, 34095 Montpellier Cedex 5 - France
4:10PM, X8 (Student Paper)
"Observation of the Quantum Confined Stark Effect in ZnSe/ZnCdSe Single Quantum Well Systems," by S.W. Short, S.H. Xin, A. Yin, H. Luo, M. Dobrowolska, J.K. Furdyna, Department of Physics, University of Notre Dame, Notre Dame, IN 46556
4:30PM, X9
"New Mechanism of Excitonic Enhancement Optical Gain for Wide-gap Quantum Wells," by Takeshi Uenoyama, Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika-cho Sourakugun Kyoto 619-02, Japan
4:50PM, X10
Late News
1:30PM, Y1
"Strain Accommodation in Mismatched Layers During Molecular Beam Epitaxy: Introduction of a Conformal Substrate Technology," by April S. Brown, Nan Marie Jokerst, K.C. Rajkumar, Carrie Carter, Zhe Chuan Feng, Georgiana Dagnall, Mark Allen, and Douglas Dawson, School of Electrical and Computer Engineering, Microelectronics Research Center, Atlanta, GA 30332-0250
1:50PM, Y2
"Incoherent Interface of InAs Grown on GaP (001)," by J.C.P. Chang, T.P. Chin, and J.M. Woodall, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1285
2:10PM, Y3
"MBE Growth of Lattice-Matched Metal/Semiconductor Structure," by Hiroshi Nakao, Toshihiko Mori, Shunichi Muto, Naoki Yokoyama, Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
2:30PM, Y4
"Electrical Properties of Ferroelectric BaMgF4 Films Grown on Modulation-Doped AlGaAs/GaAs (100) Structures," by Shun-Ichiro Ohmi, Eisuke Tokumitsu, and Hiroshi Ishiwara, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
1:30PM, Z1 (Student Paper)
"Low Resistance Ohmic Contacts to n-GaAs Processed at Low Temperatures (<150deg.C)," by P.H. Hao and L.C. Wang, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-3128; C.P.J. Chang, School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1285; Fei Deng and S.S. Lau, ECE Department, University of California, San Diego, La Jolla, CA 92093; and B.J. Wu, 3M Science Research Laboratory, 3M Center Bldg., 201-1N-35, St. Paul, MN 55144-1000
1:50PM, Z2 (Student Paper)
"Planar Low Resistance Pd-Ohmic Contact Schemes to p-InGaAsP Based on the Solid Phase Regrowth (SPR) Principle," by Moon-Ho Park, L.C. Wang, Mail Stop 3128, Electrical Engineering Department, Texas A&M University, College Station, TX 77845; and C.J. Palmstrom, Chemical Engineering and Materials Science, 421 Washington Avenue, S.E., University of Minnesota, Minneapolis, MN 55455
2:10PM, Z3
"Thermally Stable InGaP/GaAs Schottky Contacts Using Low-N Content Double Layered WSiN," by Kenji Shiojima, Kazumi Nishimura, Masami Tokumitsu, Takumi Nittono, Hirohiko Sugawara, and Fumiaki Hyuga, NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Astugi-shi, Kanagawa Pref., 243-01, Japan
2:30PM, Z4
"Transmission Electron Microscopy of Pd/InP Interfaces Formed at Room Temperature and Cryogenic Temperature," by J.W. Palmer and W.A. Anderson, State University of New York at Buffalo, Center for Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260; D.T. Hoelzer, Alfred University, NYS College of Ceramics, McMahon Hall, Alfred, NY 14802; and M. Thomas, 212 Clark Hall, Cornell University, Ithaca, NY 14853
2:50PM, Z5
"Metal-Semiconductor Contacts to n-ZnSSe," by Albert Z.H. Wang and Wayne A. Anderson, Dept. of Electrical and Computer Engineering, State University of New York at Buffalo, 217C Bonner Hall, Amherst, NY 14260
3:30PM, Z6 (Invited)
"In-Situ SEM Comparison Studies on Electromigration of Cu and Cu(Sn) Alloys for Advanced Chip Interconnects," by K.L. Lee and C.K. Hu, IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598; and K.N. Tu, Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595
4:10PM, Z7 (Student Paper)
"Low Resistivity Ni Interconnect Films by Sputter Deposition at Elevated
Temperature," by J.N. Su, V. Saxena, and A.J. Steckl, Nanoelectronics
Laboratory, Department of Electrical and Computer Engineering, University of
Cincinnati, Cincinnati, OH 45221-0030
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