2000 Electronic Materials Conference: Calendar of Events

June 21-23, 2000 · 42ND ELECTRONIC MATERIALS CONFERENCE · Denver, Colorado

Sponsored by the Electronic Materials Committee of The Minerals, Metals & Materials Society (TMS), the 42nd Electronic Materials Conference (EMC) will be held June 21-23, 2000, at the University of Denver in Denver, Colorado. The EMC is also being coordinated with the Device Research Conference of the Institute of Electrical and Electronics Engineers (IEEE), which will be held at the same location, June 19-21, 2000. This coordination recognizes the strong interaction between electronic materials and device research and should provide for a maximum exchange of information between attendees of both conferences.

The EMC will provide a forum for topics of current interest and significance in the areas related to the preparation and characterization of electronic materials. Individuals actively engaged or interested in electronic materials research and development are encouraged to attend this meeting, and papers in this general subject are solicited.


SCHEDULE OF EVENTS
FUNCTION	TIME	LOCATION
TUESDAY, JUNE 20, 2000
Registration	3:00 PM-5:00 PM	Driscoll Center North, Flounders Lounge

WEDNESDAY, JUNE 21, 2000
Registration	7:30 AM-5:00 PM	Driscoll Center North, Flounders Lounge
Exhibit Booths	10:00 AM-5:00 PM 7:00 PM-9:00 PM	Driscoll Center North, Ballroom C/D
Welcome Reception	7:00 PM-9:00 PM	Driscoll Center North, Ballroom C/D
Plenary Session (including Student Awards Ceremony) Speaker: L.L. Kazmerski	8:20 AM	Sturm Auditorium
Session A. MID-IR Devices - I	10:00 AM	To Be Assigned
Session B. Modeling of Nano-Structures	10:00 AM	To Be Assigned
Session C. Polarization and Piezoelectric Effects in Nitrides	10:00 AM	To Be Assigned
Session D: Photonic Bandgap Materials	10:00 AM	To Be Assigned
Session E: Organic Materials and Devices-I	10:00 AM	To Be Assigned
Session F: Oxides of Compound Semiconductors	10:00 AM	To Be Assigned
Session G: MID-IR Devices-II	1:20 PM	To Be Assigned
Session H: Special Topical Session	1:20 PM	To Be Assigned
Session I: Advanced Nitride Epitaxy	1:20 PM	To Be Assigned
Session J: Contacts to GaN and Other Wide Bandgap Semiconductors	1:20 PM	To Be Assigned
Session K: Si-Based Heterostructures	1:20 PM	To Be Assigned
Session L: Organic TFT's and Electronic Transport	1:20 PM	To Be Assigned
Session M: Transparent Conducting Oxides-I: Materials and Defect Physic	1:20 PM	To Be Assigned

THURSDAY, JUNE 22, 2000
Session N: Epitaxy for Devices	8:00 AM	To Be Assigned
Session O: Nanometer Scale Characterization	8:00 AM	To Be Assigned
Session P: Transport Properties in Nitride Structures	8:00 AM	To Be Assigned
Session Q: SiC Contacts and Ion Implantation	8:00 AM	To Be Assigned
Session R: Silicon Integration: Thin Oxides, Alternate Dielectrics and Epitaxial Metals	8:00 AM	To Be Assigned
Session S: Transparent Conducting Oxides-II	8:00 AM	To Be Assigned
Session T: InGaAsN and Related Materials	1:20 PM	To Be Assigned
Session U: Properties of Quantum Wires and Wells, Wires, and Superlattices	1:20 PM	To Be Assigned
Session V: Point and Extended Defects in Mismatched Materials	1:20 PM	To Be Assigned
Session W: SiC Growth and Processing	1:20 PM	To Be Assigned
Session X: Silicon Integration Issues: Metallization and Low-K Dielectrics	1:20 PM	To Be Assigned
Session Y: Organic Materials and Devices-II	1:20 PM	To Be Assigned

FRIDAY, JUNE 23, 2000
Session Z: Ordering in Semiconductor Alloys	8:00 AM	To Be Assigned
Session AA: Novel Materials	8:00 AM	To Be Assigned
Session BB: Advances in the Growth of Quantum Dots	10:20 AM	To Be Assigned
Session CC: Nitride Optoelectronics	8:00 AM	To Be Assigned
Session DD: Nanostructure Fabrication-I	8:00 AM	To Be Assigned
Session EE: Non-Destructive Testing and In-Situ Monitoring/Control	8:00 AM	To Be Assigned
Session FF: Materials Integration: Wafer Bonding and Alternate Substrates	8:00 AM	To Be Assigned
Session GG: Characterization of Quantum Dots	1:20 PM	To Be Assigned
Session HH: Dopant and Other Point Defects in Wide Bandgap Semiconductors	1:20 PM	To Be Assigned
Session II: Nanostructure Fabrication-II	1:20 PM	To Be Assigned
Session JJ: Device Processing: Etching, Implantation, Oxidation and Passivation	1:20 PM	To Be Assigned

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