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2005 Electronic Materials Conference

2005 ELECTRONIC MATERIALS CONFERENCE • June 22-24, 2005 • University of California • Santa Barbara, CA

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IMPORTANT INFO

Final Preliminary Program (PDF)
  • Author Acceptance Notification
    April 4, 2005
  • Late News Submission Deadline
    June 3, 2005
  • Early Registration Ends
    June 8, 2005
  • Welcoming Reception
    June 22, 2005

 

Technical Program Overview

The electronic materials technical program commences at 8:20 a.m. on Wednesday, June 22. All sessions are held on grounds at the University of California. University Center/Corwin Pavilion is the location of the conference plenary session.

SCOPE

Papers have been solicited in the following topic areas for EMC 2005.

Issues for Wide Bandgap Materials

  • Group III-Nitrides: Growth, Processing, Characterization, Theory, and Devices
  • Point Defects, Extended Defects, and Doping in Wide Bandgap Materials
  • Silicon Carbide: Growth, Processing, Characterization, Theory, and Devices
  • Zinc Oxide: Growth, Doping, Defects, Nanostructures, and Devices
Nanoscale Science and Technology in Materials
  • Chemical and Biological Sensors: Materials, Interfaces, and Integration
  • Low-Dimensional Structures: Quantum Dots, Wires, and Wells
  • Molecular Electronics: Devices, Materials and Contacts
  • Nanoscale Characterization: Scanned Probes, Electron Microscopy, and Other Techniques
  • Nanotubes and Nanowires

Other Topics

  • Contacts to Semiconductor Epilayers, Nanowires, Nanotubes, and Organic Films
  • Epitaxy
  • Epitaxy for Devices
  • Epitaxy: Growth, Metamorphic, and Templates (Other Areas)
  • Point and Extended Defects in Mismatched Materials
  • Non-Destructive Testing and in situ Monitoring/Control
  • Semiconductors: Processing and Oxidation
  • Materials Integration: Wafer Bonding and Alternative Substrates
  • Oxide Thin Film Integration: Alternative Dielectrics, Epitaxial Oxides, and Metal Gates
  • Si-Based Heterojunctions and Strained Si: Growth, Characterization, and Applications
  • Narrow Bandgap Semiconductors: Antimonides and Other Materials
  • Indium Nitride: Growth, Processing, Characterization, Theory, and Devices
  • Spin-Dependent (or Spintronic) Electronic Materials
  • Dilute Nitride Semiconductors
  • Flexible Thin-Film Electronics
  • Organic Thin Film and Crystalline Transistors: Devices, Materials, and Processing

LATE NEWS PAPERS

Late news papers will be considered between February 3-June 3, 2005. To submit a Late News Paper, visit the EMC Conference in CMS-Plus and select Late News.

Abstracts must be prepared according to the following directions. All prospective authors are invited to submit a 450-word abstract by June 3, 2005 using CMS-Plus, the TMS conference management system. The system allows anyone with a World Wide Web browser to submit an abstract electronically, day or night. Conference organizers receive electronic notification of all abstract submissions upon entry. Follow the easy instructions for electronic submission and direct communication with the conference organizers. Abstracts MUST be submitted electronically.

If you have questions or need assistance while using CMS-Plus, please contact TMS Technical Programming Services at (724) 776-9000 ext. 212 or 227; e-mail raabe@tms.org.

PAPER PUBLICATIONS

Conference abstracts will be published in the Journal of Electronic Materials. We also strongly encourage you to submit full-length manuscripts on your work to the Journal of Electronic Materials. Please review the details on manuscript submission which is included in the EMC Advance Program and are available on the JEM homepage.


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