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2007 Electronic Materials Conference

2007 ELECTRONIC MATERIALS CONFERENCE • June 20-22, 2007• University of Notre Dame • Indiana, USA

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IMPORTANT INFO

PROGRAM-AT-A-GLANCE
(PDF DOWNLOAD - 8.1 MB)

FINAL PROGRAM
(WED-THUR)

(PDF DOWNLOAD - 1 MB)

FINAL PROGRAM
(FRIDAY-INDEX)

(PDF DOWNLOAD - 5.2 MB)

EXHIBIT FLOOR PLAN
(PDF DOWNLOAD - 82 Kb)

June 20 – Welcoming Reception

 

Technical Program Overview

Technical sessions commence with the plenary session on Wednesday, June 20 at 8:20 a.m., in the Leighton Concert Hall of the DeBartolo Performing Arts Center. All subsequent technical sessions will be held in DeBartolo Hall.

TECHNICAL PROGRAM TOPIC AREAS

Papers presented will cover these areas:

Wide Bandgap Materials

  • Group III-Nitrides: Growth, Processing, Characterization, Theory and Devices
  • Zinc Oxide: Growth, Doping, Defects, Nanostructures and Devices
  • Silicon Carbide: Growth, Processing, Characterization, Theory and Devices
  • Point Defects, Extended Defects and Doping in Wide Bandgap Materials

Nanoscale Science and Technology in Materials

  • Low-Dimensional Structures: Quantum Dots, Wires and Wells
  • Nanoscale Characterization: Scanned Probes, Electron Microscopy and Other Techniques
  • Molecular Electronics: Devices, Materials and Contacts
  • Nanotubes and Nanowires
  • Chemical and Biological Sensors: Materials, Interfaces and Integration

Additional Topics

  • Contacts to Semiconductor Epilayers, Nanowires, Nanotubes and Organic Films
  • Epitaxy
  • Epitaxy for Devices
  • Epitaxy: Growth, Metamorphic and Templates (Other Areas)
  • Point and Extended Defects in Mismatched Materials
  • Nondestructive Testing and in situ Monitoring and Control
  • Semiconductor Processing: Oxidation, Passivation, Functionalization and Etching
  • Materials Integration: Wafer Bonding and Engineered Substrates
  • Oxide Thin Film Integration: Alternative Dielectrics, Epitaxial Oxides and Metal Gates
  • Si-Based Heterojunctions and Applications
  • Narrow Bandgap Semiconductors: Antimonides and Other Materials
  • Indium Nitride: Growth, Processing, Characterization, Theory and Devices
  • Spin-Dependent (or Spintronic) Electronic Materials
  • Dilute Nitride Semiconductors
  • Flexible Thin Film Electronics
  • Organic Thin Film and Crystalline Transistors: Devices, Materials and Processing
  • Organic-Inorganic Hybrid Photovoltaic
  • Materials and Novel Concepts for UV Detectors and Emitters

Other/New Topics

  • Compound Semiconductor Growth on Si Substrates
  • Fuel Cell and Battery Materials
  • Solar Cell Materials and Devices
  • Graphene
  • Thermoelectrics and Thermionics

AUTHOR REQUIREMENTS

Authors are expected to present their papers in person at the conference. If an author must be absent or withdraw a paper, the program chair must be notified well in advance.

LATE NEWS PAPERS

Late News Papers will be considered between Feb. 9 and June 1, 2007.

To submit a Late News Paper, authors must visit the “EMC Conference” in CMS-Plus and select “Late News.” Formatting instructions noted previously apply.

ON-SITE PROGRAM NOTES

Program
Registrants will receive a complete program with abstracts of papers to be presented at the meeting, at the on-site registration desk.

Audio/Video Recording Policy
TMS reserves the right to all audio and video reproductions of presentations at TMS sponsored meetings. Recording of sessions (audio, video, still photography, etc.) intended for personal use, distribution, publication, or copyright without the express written consent of TMS and the individual authors is strictly prohibited. Contact TMS Technical Programming at (724) 776-9000, ext. 212, to obtain a waiver release.


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