IMPORTANT INFO

Late News Abstracts Submission Deadline August 1st, 2005 Manuscript Submission Deadline (invited, regular, late news) September 1st, 2005 Revised Paper Deadline October 14, 2005 Manuscripts for invited, regular, and late news papers, must be received by September 1, 2005, to be considered for inclusion in this conference.

• Reduction of Dislocations in the Bulk Growth of SiC Crystals, D. Nakamura (plenary)
• Halide-CVD Growth of Bulk SiC Crystals, A. Y. Polyakov (invited)
• Advances and Challenges in Numerical Simulation of Bulk SiC Growth by PVT and CVD, Y. Makarov (invited)
• The Spatial Distribution of Defects in Dependence on the Seed Polarity and Off-Orientation During the Growth of 4H – SiC Single Crystals, H. J. Rost (invited)
• Structure of Carrot Defects in 4H-SiC Epilayers, X. Zhang (invited poster)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness, T. Aigo (invited poster)
• Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters, R. Drachev (invited poster)

• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs, B. Thomas (invited)
• Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling, S. Nishizawa (invited)
• Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices, J. J. Sumakeris (invited)
• Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC, C. R. Eddy (invited)
• Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layer, K. Kojima (invited poster)

• Si-SiO2 and SiC-SiO2 Interfaces for MOSFETS – Challenges and Advances, S. T. Pantelides (plenary)
• Theory of Dislocations in SiC, A. T. Blumenau (invited)
• Optical Studies of Deep Centers in Semi-Insulating SiC, B. Magnusson (invited)
• Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes, M. Miao (invited)
• Nm-Resolution Measurement of Individual Planar Inclusions in 4H-SiC using BEEM: Quantum-Well Energy Depth and Local Transport Behavior,J. P. Pelz (invited)
• Phonons in SiC from INS, IXS, and Ab-Initio Calculations, D. Strauch (invited)
• Electronic Raman Studies of Shallow Donors in SiC, M. Hundhausen (invited)
• Deep Level Point Defects in Semi-Insulating SiC, M. Zvanut (invited poster)
• Characterization of SiC Crystals by Using DUV Excitation Raman Scattering Spectroscopy, S. Nakashima (invited poster)

• Ion Implantation Processing and Related Effects in SiC, B. G. Svensson (plenary)
• Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics, S. Tanimoto (invited)
• Development of Ohmic Contact Materials for p-Type 4H-SiC, M. Murakami (invited)
• Nanochemistry at Silicon Carbide Surfaces: H-Induced Semiconductor Surface Metallization, P. G. Soukiassian (invited)
• High Channel Mobility 4H-SiC MOSFETs, E. O. Sveinbjornsson (invited)
• Characterization of SiC Wafers by Photoluminescence Mapping, M. Tajima (invited)
• Nitrogen and Hydrogen Induced Trap Passivation at the SiO 2/ 4H-SiC Interface, S. Dhar (invited)

• Energy Efficiency: The Commercial Pull for SiC Devices, J. W. Palmour (plenary)
• SiC Device Applications: Identifying and Developing Commercial Applications, J. M. Hancock (invited)
• SiC Power MOSFETs – Status, Trends and Challenges, D. Peters (invited)
• Evolution of Drift-Free, High Power 4H-SiC PiN Diodes, M. K. Das (invited)
• Advances in SiC GTO Development and Its Applications, Y. Sugawara (invited)
• Developments in Hybrid Si-SiC Power Modules, G. Skibinski (invited)

Please contact the Programming Services Department at TMS for assistance or further instruction.

TMS
Technical Programming Dept.
184 Thorn Hill Road
Warrendale, PA 15086
telephone (724) 776-9000, ext. 212
fax (724) 776-3770
Email: raabe@tms.org