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13th International Conference on Defects —
Recognition, Imaging and Physics in Semiconductors (DRIP XIII)
DRIP XIII • SEPTEMBER 13-17, 2009 • WHEELING, WEST VIRGINIA, USA
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IMPORTANT INFO

TECHNICAL PROGRAM
View the technical program online.

FINAL TECHNICAL PROGRAM
Download a PDF of the program.

MEETING REGISTRATION

HOUSING RESERVATIONS
Make a reservation now to ensure best selection and availability


DRIP XIII: Technical Program Scope

Conference attendees will learn about all aspects of defects in materials growth, processing, and device fabrication. Recent research and developments in semiconductor defects will be presented concerning recognition, imaging, characterization, origin and properties, and effect on device performance and reliability.

SCOPE AND TOPICS

 

The following represent the overall technical scope and related topics:

  • Physics of point and extended defects in elemental and compound semiconductors: origin and properties
  • Imaging techniques for examining point and extended defects (proximity probe, x-ray, electron beam, noncontact electrical, optical and thermal imaging techniques)
  • Device imaging to evaluate performance and reliability
  • Effects of defects on properties of semiconductors and interfaces
  • Defect evolution during device operation and effect on device reliability
  • Large area wafer mapping
  • In situ defect monitoring and process control
  • Material-specific (photovoltaics, silicon, SOI, III-V, wide band gap) growth- and processing-induced defects.
PROGRAM INQUIRES

 

For inquires regarding the program, please contact:


Program Co-Chair
 State University of New York at Stony Brook, New York
Phone: (631) 632-8500


Program Co-Chair
 Naval Research Laboratory, Washington, D.C.
Phone: (202) 767-3357

FOR MORE INFORMATION . . .


For more information about this conference, please submit a form or contact:

TMS Meeting Services
184 Thorn Hill Road
Warrendale , PA 15086-7514 USA
Telephone (724) 776-9000, ext. 243
(800) 759-4TMS
Fax: (724) 776-3770
E-mail:

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