JOURNAL OF ELECTRONIC MATERIALS
	TABLE OF CONTENTS Volume 23, Number 6, June 1994 This Month Featuring: Regular Issue Papers.

REGULAR ISSUE PAPERS

The Ir/Si/ErSi₂ Tunable Infrared Photoemission Sensor [pp. 497-502]
I. Sagnes, Y. Campidelli, and P.A. Badoz

Energy-Band Offsets and Electroluminescence in n-InAs_1-x Sb_x/N-GaSb Heterojunctions Grown by Liquid Phase Epitaxy [pp. 503-508]
Y. Mao and A. Krier

Modulated Reflectance and Absorption Characterization of Single Crystal GaN Films [pp. 509-512]
A. Giordana, D.K. Gaskill, D.K. Wickenden, and A. Estes Wickenden

Two Electron Transitions of the Exciton Bound at the Si Donor Confined in GaAs/AI_xGa_1-xAs Quantum Wells [pp. 513-518]
P.O. Holtz, B. Monemar, M. Sundaram, J.L. Merz, and A.C. Gossard

Defects in Molecular Beam Epitaxial GaAs Grown at Low Temperatures [pp. 519-524]
N. Hozhabri, S.C. Sharma, R.N. Pathak, and K. Alavi

Rheological Characterization of Solder Pastes [pp. 525-532]
Romano Lapasin, Vittorio Sirtori, and Donato Casati

The Effect of Gold-Nickel Metallization Microstructure on Fluxless Soldering [pp. 533-540]
R.B. Cinque and J.W. Morris, Jr.

Active Brazing Alloy Paste as a Totally Metal Thick Film Conductor Material [pp. 541-550]
Mingguang Zhu and D.D.L. Chung

Interactions Between Ferroelectric BaTiO₃ and Si [pp. 551-556]
Q.X. Jia, L.H. Chang, and W.A. Anderson

Thermally Conducting Polymer-Matrix Composites Containing Both AlN Particles and SiC Whiskers [pp. 557-564]
Lin Li and D.D.L. Chung

Growth and In Situ Ellipsometric Analysis of Si_1-xGe_x Alloys Deposited by Chemical Beam Epitaxy [pp. 565-568]
P. Boucaud, F. Glowacki, Y. Campidelli, A. Larré, F. Ferrieu, and D. Bensahel

Effects of Nitrogen Doping on the Growth and Properties of Plasma-Enhanced Chemical-Vapor-Deposited Diamond-Like-Carbon Films [pp. 569-576]
G. Sreenivas, S.S. Ang, and W.D. Brown

Molecular Beam Deposition of Low-Resistance Polycrystalline GaAs [pp. 577-580]
K. Mochizuki T. Nakamura, T. Mishima, H. Masuda, and T. Tanoue