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Promising Alloy for Resistive Switching Memory

Posted on: 11/03/2013
A team of researchers in Singapore have demonstrated how conductive nano-filaments in amorphous titanium dioxide (TiO2) thin films could be used for resistive switching device applications, a breakthrough that could lead to faster, smaller electronic devices. Resistive switching would allow for a higher memory density.

Researchers from the National University of Singapore and the Agency for Science, Technology and Research (A*STAR) of Singapore have tested a number of oxide materials for their promise in resistive switching memories. The basic idea of resistive switching is that an oxide, which normally acts as an insulator, can be transformed into a conductor, creating a nanoscale filament by using a sufficiently high voltage.

With a resistive random-access memory (RRAM) device comprising a single filament, two distinct resistance states (“1” and “0”) can be obtained through a simple process of filament rupture and re-formation. The conductivity of the oxide thin films can be adjusted by changing the deposition conditions.

The research team applied both conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM), instead of treating filamentary and interfacial effects separately as done previously. Both effects were integrated into one filament-interface model.

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