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Looking Sideways at 2-D Technology

Posted on: 02/24/2014
Researchers at Oak Ridge National Laboratory (ORNL) and the University of Tennessee (UT), Knoxville have pioneered a new technique for forming a two-dimensional (2-D), single-atom sheet of two different materials with a seamless boundary by growing the materials sideways.

Graphene has the potential to revolutionize nanotechnology and electronics due to its high strength and electronic properties, but to do so, must be integrated with other materials. The ORNL and UT researchers combined graphene and boron nitride into a single layer only one atom thick, with an atomically sharp boundary in between, by using epitaxy, but directing the growth process horizontally instead of vertically. The new technique also allows researchers to experimentally investigate the graphene-boron nitride boundary.

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