TMS Logo

About the 1996 TMS Annual Meeting: Tuesday Afternoon Sessions (February 6)

February 4-8 · 1996 TMS ANNUAL MEETING ·  Anaheim, California


Proceedings Info

Sponsored by: EMPMD Thin Films & Interfaces Committee

Program Organizers: N. M. Ravindra, New Jersey Institute of Technology, Newark, NJ; R. K. Singh, University of Florida, Gainesville, FL

Tuesday, PM Room: Grand J

February 6, 1996 Location: Anaheim Marriott Hotel

Session Chairmen: Kevin S. Jones, University of Florida, Gainesville, FL; James C. Sturm, Princeton University, Princeton, NJ

2:00 pm Invited

RAPID THERMAL PROCESSING OF REFRACTORY SILICIDES FOR THE GaAs DEVICE TECHNOLOGY: A. Christou, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742

Abstract not available.

2:30 pm Invited

TRANSIENT THERMAL PROCESSING IN III-V SEMICONDUCTOR TECHNOLOGY: S. J. Pearton, Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611

Transient processing is employed at numerous points in the processing of III-V electronic and photonic devices. Examples include implant activation of both donor and acceptor dopants, alloying of ohmic contacts, maximization of sheet resistance in implant-isolated regions and RTCVD of dielectrics, metallization and semiconductors. Recently there has been tremendous interest in GaN and related alloys for blue emitters. We have achieved formation of both n-type and p-type regions in GaN using rapid thermal annealing at - 1100[[ring]]C on Si or Mg/P implanted material. We will review the use of transient thermal processing in III-V semiconductor technology and identify areas for future research.

3:00 pm Invited

INFLUENCE OF RTP ANNEAL ON DISTRIBUTION OF OXYGEN 16/18 IN Ge AND GaAs: M. Dubey, R. Lareau, M. Ervin, Army Research Lab, Advanced Device Fabrication Div, Ft. Monmouth, NJ 07703

Abstract not available.

3:30 pm BREAK

3:45 pm Invited

EFFECT OF RAPID THERMAL ANNEAL ON THE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE DIAMOND: Eng Kie Souw, Department of Applied Technologies, Brookhaven National Lab, Bldg. 820M, Upton, NY 11973; F.M. Tong, N.M. Ravindra, Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102; R.J. Meilunas, Northrop Grumman Corpn., MS A01-26, Bethpage, NY 11714

Abstract not available.

4:15 pm

PROCESSING OF HIGH TEMPERATURE STABLE CONTACTS TO SINGLE CRYSTAL DIAMOND: A. Vescan, P. Gluche, W. Ebest, T.H. Borst, E. Kohn, Department of Electron Devices and Circuits, University of Ulm, D-89081, Ulm, Germany

In principle, the wide bandgap of diamond allows operation of the crystal at very high temperatures in the order of 1200 K. One of the key requirements for such an operation is an appropriate metallization system for Ohmic and rectifying contacts. In a recent experiment[1], we have shown that Si on p-type diamond can form chemically and electronically stable contacts up to approximately 850 deg C. On moderately boron-doped layers, it forms a Schottky barrier of 1.2 eV barrier height, whereas on p+ doped material, the contact is Ohmic by tunneling. Thus, Si on diamond is a very promising candidate for extremely high temperature operation of diamond device structures. However, for technological use, this contact needs to be complemented by a high conductivity overlayer of Au. But Au will alloy with Si at low temperatures destroying the Si-diamond interface. Therefore, a high temperature stable diffusion barrier needs to be inserted. Here WSi- alloys have been investigated. All contact layers have been deposited by sputtering and they are therefore amorphous. But, during high temperature operation, recrystallization and reactions with the Si-contact layers may occur. Therefore, the deposition process has to be accompanied by an appropriate temperature procedure and nitrogen treatment to control and stuff grain boundaries. Details on the processing procedure and chemical and electrical stability will be discussed in this presentation. Reference:[1]. A. Kescan, 4th International Symposium on Diamond Materials, Reno, Nevada (1995).

4:35 pm

RTP PROCESSING OF MAGNETIC ALLOYS: J. Viatella & R.K. Singh, Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611

Abstract not available.

4:55 pm

REDISTRIBUTION OF ZN IN INDIUM PHOSPHIDE UNDER PULSED LASER ANNEALING ACCOMPANIED BY PHASE TRANSITION: M.I. Markevich, A.M. Chaplanov, F.A. Piskounov Institute of Electronics BAS, 220090, 22 Logoiskii Trakt, Minsk, Belarus

The report presents the physical and mathematical models of the redistribution of implanted metal impurities in A3B5 semiconductors with due regards for phase melting and crystallization areas. The model consists of three differential equations. The irradiation transfer equation allowed for the absorption of heat by the non-transparent components of the transformation of laser irradiation into heat and the absorption of the later at phase transition in the dual phase area and during melting and recrystallization. The mass stability equation for the impurity allowed for its diffusion; the diffusion coefficients were different for single and dual phase areas. The redistribution profiles of implanted zinc in indium phosphide following the nanosecond laser treatment have also been presented.

5:15 pm

SPECTRA STUDY OF PULSED YAG LASER SPUTTERING PROCESS FOR CARBON NITRIDE (CNX) FILM DEPOSITION: Zhi-Feng Ying, Zhong-Min Ren, Yuan-Cheng Du, Fu-Ming Li, State Key Lab. for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433, China

A high purity graphite target was sputtered by a Pulsed-Laser YAG with various wavelengths (532, 355 nm and 1.06 um) during Carbon nitride (CNx) films deposition co-processed with low energy nitrogen ion beams. In pulsed laser transient sputtering processing for graphite, the optical emission spectra have shown that the pulsed laser transient sputtering will lead to stronger peaks such as CII: 392.1, 407.5 and 426.7 nm etc. for active carbon atoms with 532 nm YAG Laser than the one with both of 355 nm and 1.06 um YAG laser. In experiments, it is also shown that crystallization structure according to Electron diffraction (ED) patterns of Carbon nitride (CNx) films with 532 nm YAG has been improved. For potential applications, it will be beneficial to the compound films growth, such as Beta - C3N4. In this paper, the synthesis processes of carbon nitride (CNx) films deposition due to the produced carbon and nitrogen atoms interaction will be discussed briefly.

The information on this page is maintained by TMS Customer Service Center (

Search TMS Annual Meetings TMS Meetings Page About TMS TMS OnLine