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Recipient: 1997 John Bardeen Award

The Minerals, Metals & Materials Society's John Bardeen Award, established in 1994, recognizes an individual who has made outstanding contributions and is a leader in the field of electronic materials.
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John B. Goodenough

Citation: "For his seminal contributions to the chemical and physical understanding of the transition-metal oxides and their use in novel engineering applications."

Biography: John B. Goodenough is Virginia H. Cockrell Centennial Professor of Engineering at the University of Texas at Austin. He received his B.S. in mathematics in 1943 at Yale University, and his M.S. and Ph.D. in physics at the University of Chicago in 1951 and 1952, respectively. After receiving his Ph.D., he served as group leader at the Massachusetts Institute of Technology's Lincoln Laboratory for 24 years. He was professor and head of the inorganic chemistry laboratory at the University of Oxford before assuming his current position in 1986. He is the author or coauthor of approximately 400 papers, more than 70 book chapters, and two books. He is the recipient of numerous honors and awards, including being named a fellow of the National Academy of Engineering.

Quote: "On graduation, I went to the MIT Lincoln Laboratory to work on ferrites for a magnetic memory for the digital computer that would enable an Air Forces defense system. In this endeavor, I found myself engaged in the design of transition-metal oxides to meet a specific engineering requirement. The challenge of molecular engineering has motivated my career ever since and is, I believe, the heart of TMS. For one of my generation to be honored by TMS for his efforts in this direction in association with the name of John Bardeen is a moving experience."

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