Volume 23, Number 3, March 1994

This Month Featuring: Special Issue on the Wide-Bandgap II-VI Semiconductors for Blue/Green Light Emitters, Regular Issue Papers, and Letters Section.


Foreword [pp. 243-244]
Leslie A. Kolodziejski

Electrical Transport Characterizations of Nitrogen Doped ZnSe and ZnTe Films [pp. 245-250]
Y. Fan, J. Han, L. He, J. Saraie, R.L. Gunshor, M. Hagerott, and A.V. Nurmikko

Properties of Highly Conducting Nitrogen-Plasma-Doped ZnSe:N Thin Films [pp. 251-254]
K.A. Bowers, Z. Yu, K.J. Gossett, J.W. Cook, Jr., and J.F. Schetzina

Electrical Transport in n-Type ZnMgSSe Grown by Molecular Beam Epitaxy on GaAs [pp. 255-258]
T. Marshall, J.A. Petruzzello, S.P. Herko, J.M. Gaines, and C.A. Ponzoni

Nitrogen Doping of ZnSe by OMVPE Using a Novel Organometallic Precursor [pp. 259-262]
Salman Akram, Ishwara B. Bhat, and Andreas A. Melas

Nitrogen Doping in ZnSe by Photo-Assisted Metalorganic Vapor Phase Epitaxy [pp. 263-268]
Shizuo Fujita, Takeharu Asano, Kensaku Maehara, and Shigeo Fujita

Gas Source Molecular Beam Epitaxy of ZnSe and ZnSe:N [pp. 269-274]
C.A. Coronado, E. Ho, P.A. Fisher, J.L. House, K. Lu, G.S. Petrich, and L.A. Kolodziejski

Dislocation Nucleation Mechanism and Doping Effect in p-Type ZnSe/GaAs [pp. 275-282]
L.H. Kuo, L. Salamanca-Riba, J. M. DePuydt, H. Cheng, and J. Qiu

CdZnSe/ZnSe Strained Layer Superlattices Disordered by Germanium Diffusion [pp. 283-288]
T. Yokagawa, P.D. Floyd, J.L. Merz, H. Luo, and J.K Furdyna

Nanometer Fabrication Techniques for Wide-Gap II-VI Semiconductors and Their Optical Characterization [pp. 289-298]
C.M. Sotomayor Torres, A.P. Smart, M. Watt, M.A. Foad, K. Tsutsui and C.D.W. Wilkinson

Temperature and Flow Modulation Doping of Manganese in ZnS Electroluminescent Films by Low Pressure Metalorganic Chemical Vapor Deposition [pp. 299-306]
J.E. Yu, K.S. Jones, P.H. Holloway, B. Pathangey, E. Bretschneider, T. J. Anderson, S.S. Sun, and C.N. King

Multi-Mode Behavior of Optical Phonons in II-VI Ternary and Quaternary Alloys [pp. 307-312]
Eunsoon Oh and A.K. Ramdas

Stimulated Emission and Optical Gain in CdTe/CdMnTe Graded Index Separate Confinement Heterostructures [pp. 313-318]
R. Legras, Le Si Dang, C. Bodin, J. Cibert, F. Marcenat, G. Feuillet, J.L. Pautrat, D. Hervé, and E.Molva


Structural Characteristics of As-Deposited and Crystallized Mixed-Phase Silicon Films [pp. 319-330]
Apostolos T. Voutsas and Miltiadis K. Hatalis

Photoluminescence Study of GaAs Films on Si(100) Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy [pp. 331-336]
Yoshitaka Okada, Shigeru Ohta, Akio Kawabata, Hirofumi Shimomura, and Mitsuo Kawabe

An Evaluation of Contamination from Plasma Immersion Ion Implantation on Silicon Device Characteristics [pp. 337-340]
Shu Qin and Chung Chan

Energy Dependence and Depth Distribution of Electron Beam-Induced Damage in GaAs/AIGaAs Heterostructures [pp. 341-346]
Nobuyuki Tanaka and Tomonori Ishikawa

Gas Phase Synthesis and Processing of Silicon Nanocrystallites: Characterization by Photoluminescence Emission Spectroscopy [pp. 347-354]
L.A. Chiu, A.A. Seraphin, and K.D. Kolenbrander


Origin of Nonradiative Recombination Centers in AlGaInP Grown by Metalorganic Vapor Phase Epitaxy [pp. 355-358]
Makoto Kondo, Naoko Okada, Kay Domen, Katsumi Sugiura, Chikashi Anayama, and Toshiyuki Tanahashi

Transient Grating Measurements of Ambipolor Diffusion and Carrier Recombination in InGaP/lnAlP Multiple Quantum Wells and InGaP Bulk [pp. 359-362]
M. Prasad, O.E. Martinez, C.S. Menoni J.J. Rocca, J.L.A. Chilla, M.J. Hafich, and G.Y. Robinson

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