Volume 23, Number 4, April 1994

This Month Featuring: Regular Issue Papers.


Electron Beam Induced Current Investigations of Active Electrical Defects in Silicon due to Reactive Ion Etching and Reactive Ion Beam Etching Processes [pp. 363-368]
G. Jäger-Waldau, H. -U. Habermeier, G. Zwicker, and E. Bucher

Damage and Strain in Pseudomorphic vs Relaxed GexSi1-x Layers on Si(100) Generated by Si Ion Irradiation [pp. 369-374]
D.Y.C. Lie, A. Vantomme, F. Eisen, T. Vreeland, M.-A. Nicolet, T.K. Carns, K.L. Wang, and B. Holländer

Mode I Fracture Toughness Testing of Eutectic Sn-Pb Solder Joints [pp. 375-382]
Ronald E. Pratt, Erie I. Stromswold, and David J. Quesnel

Copper Chemical Vapor Deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane [pp. 383-390]
Jung-Chao Chiou, Yin-Jang Chen, and Mao-Chieh Chen

P-type Doping of GaAs by Carbon Implantation [pp. 391-396]
H. Jiang, R.G. Elliman, and J.S. Williams

Pd-Ge Contact to n-GaAs with the TiW Diffusion Barrier [pp. 397-402]
Wen Chang Huang, Tan Fu Lei, and Chung Len Lee

Electrical Properties of He+ Ion-Implanted GaInP [pp. 403-408]
S.-L. Fu, T.P. Chin, B. Zhu, C.W. Tu, S.S. Lau, and P.M. Asbeck

The Effect of Surface Species on the Photoluminescence of Porous Silicon [pp. 409-412]
K-H. Li, C. Tsai, J.C. Campbell, M Kovar, and J.M. White

Titanium Silicide/Germanide Formation on Submicron Features for High Mobility SiGe Channel Field Effect Transistors [pp. 413-422]
P.D. Agnello, V.P. Kesan, M. Tejwani, and J.A. Ott

Origin of Optical Anisotropy in Strained InxGa1-xAs/InP and InyAl1-yAs/InP Heterostructures [pp. 423-429]
B.R. Bennett, J.A. del Alamo, M.T. Sinn, F. Peiró, A. Cornet, and D.E. Aspnes

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