Volume 24, Number 11, November 1995

This Month Featuring: Proceedings of the 1995 Workshop on Organometallic Vapor Phase Epitaxy and Regular Issue Papers. View November 1995 Abstracts.


Foreword [p. 1517]
D. Kurt Gaskill and Stephen D. Hersee

The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire [pp. 1519-1523]
S.D. Hersee, J. Ramer, K. Zheng, C. Kranenberg, K. Malloy, M. Banas, and M. Goorsky

The Effect of Organometallic Vapor Phase Epitaxial Growth Conditions on Wurtzite GaN Electron Transport Properties [pp. 1525-1530]
D.K. Gaskill, A.E. Wickenden, K. Doverspike, B. Tadayon, and L.B. Rowland

Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers [pp. 1531-1534]
R. Niebuhr, K. Bachem, K. Dombrowski, M. Maier, W. Pletschen, and U. Kaufmann

On the Role of Interface Properties in the Degradation of Metalorganic Vapor Phase Epitaxially Grown Fe Profiles in InP [pp. 1535-1537]
H. Roehle, H. Schroeter-Janssen, P. Harde, and D. Franke

Controlled Oxygen Incorporation in Indium Gallium Arsenide and Indium Phosphide Grown by Metalorganic Vapor Phase Epitaxy [pp. 1539-1546]
J.W. Huang, J.M. Ryan, K.L. Bray, and T.F. Kuech

Doping of Gallium Nitride Using Disilane [pp. 1547-1550]
A.E. Wickenden, L.B. Rowland, K. Doverspike, D.K. Gaskill, J.A. Freitas, Jr., D.S. Simons, and P.H. Chi

A Novel Pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs Bilayer-Quantum-Well Structure Lattice-Matched to GaAs for Long-Wavelength Optoelectronics [pp. 1551-1555]
M. Peter, J. Forker, K. Winkler, K.H. Bachem, and J. Wagner

ZnMgSSe/ZnSSe/ZnSe-Heterostructures Grown by Metalorganic Vapor Phase Epitaxy [pp. 1557-1561]
J. Söllner, J. Schmoranzer, H. Hamadeh, B. Bollig, E. Kubalek, and M. Heuken

InSb, GaSb, and GaInSb Grown Using Trisdimethylaminoantimony [pp. 1563-1569]
J. Shin, Y. Hsu, T.C. Hsu, G.B. Stringfellow, and R.W. Gedridge

Real-Time Optical Monitoring of Epitaxial Growth: Pulsed Chemical Beam Epitaxy of GaP and InP Homoepitaxy and Heteroepitaxy on Si [pp. 1571-1576]
N. Dietz, U. Rossow, D. Aspnes, and K.J. Bachmann

Effect of Temperature on InGaAsP Alloy Composition [pp. 1577-1581]
R.M. Lum, M.L. McDonald, E.M. Mack, M.D. Williams, F.G. Storz, and J. Levkoff

Characterization of Very High Purity InAs Grown Using Trimethylindium and Tertiarybutylarsine [pp. 1583-1590]
S.P. Watkins, C.A. Tran, G. Soerensen, H.D. Cheung, R.A. Ares, Y. Lacroix,and M.L.W. Thewalt

Step Structure During Organometallic Vapor Phase Epitaxial Growth of Ordered GaInP [pp. 1591-1595]
G.B. Stringfellow, L.C. Su, Y.E. Strausser, and J.T. Thornton

Atomic Layer Epitaxy of InAs Using Tertiarybutylarsine [pp. 1597-1603]
C.A. Tran, R. Ares, S.P. Watkins, G. Soerensen, and Y. Lacroix

Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100) Surfaces [pp. 1605-1609]
C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars

Growth of GaInP/GaAsP Short Period Superlattices by Flow Modulation Organometallic Vapor Phase Epitaxy [pp. 1611-1615]
K.L. Whittingham, D.T. Emerson, J.R. Shealy, M.J. Matragrano, and D.G. Ast

The Properties of MOVPE Grown 1.3 µm DFB MQW Lasers Infilled With Semi-Insulating InP Fabricated On Semi-Insulating Substrates [pp. 1617-1620]
N. Carr, J. Thompson, G.G. Jones, I. Griffith, A.J. Moseley, and P.M. Charles

Semi-Insulating Selective Regrowth of Surface Light Emitting Diodes [pp. 1621-1624]
Ching-Long Jiang, Mark Mashas, Maria Ferreira, John Kulick, Eugene Imhoff, and William Reysen

Maskless Selective Area Growth of InP on Sub-um V-Groove Patterned Si(001) [pp. 1625-1629]
R.F. Schnabel, A. Krost, M. Grundmann, D. Bimberg, and H. Cerva

Growth, Characterization, and Modeling of Ternary InGaAs-GaAs Quantum Wells by Selective-Area Metalorganic Chemical Vapor Deposition [pp. 1631-1636]
A.M. Jones, M.L. Osowski, R.M. Lammert, J.A. Dantzig, and J.J. Coleman

Investigation of the Wafer Temperature Uniformity in an OMVPE Vertical Rotating Disk Reactor [pp. 1637-1640]
A.I. Gurary, A.G. Thompson, R.A. Stall, W.J. Kroll, and N.E. Schumaker

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT Structures [pp. 1641-1648]
K.A. Jones, R.T. Lareau, T. Monahan, J.R. Flemish, R.L. Pfeffer, R.E. Sherriff, C.W. Litton, R.L. Jones, C.E. Stutz, and D.C. Look

Thermodynamic Modeling of As and P Incorporation in GaxIn1-xPyAs1-y Epitaxial Layers Grown by Organometallic Vapor Phase Epitaxy [pp. 1649-1654]
A.S. Jordan

Metalorganic Vapor Phase Epitaxial Growth of GaInAsP/GaAs [pp. 1655-1658]
A. Knauer, G. Erbert, S. Gramlich, A. Oster, E. Richter, U. Zeimer, and M. Weyers

Evaluation and Optimization of Large Area III-V Epitaxial Thickness Uniformity Using a Fabry-Perot Microcavity Test Structure [pp. 1659-1665]
Qing S. Paduano, David Weyburne, Feng Lu, and R. Bhat

Growth of GaxIn1-xAs1-ySby Alloys by Metalorganic Chemical Vapor Deposition [pp. 1667-1670]
Li Shuwei, Jin Yixin, Zhou Tianming, Zhang Baolin, Ning Yongqiang, Jiang Hong, and Yuan Guang

Low Temperature Growth and Planar Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System [pp. 1671-1675]
W. Taudt, B. Wachtendorf, F. Sauerländer, H. Hamadeh, S. Lampe, and M. Heuken

Effect of Se-doping on Deep Impurities in AlxGa1-xAs Grown by Metalorganic Chemical Vapor Deposition [pp. 1677-1682]
J.C. Chen, Z.C. Huang, Bing Yang, H.K. Chen, Tao Yu, and Kun-Jing Lee

Effect of Bragg Reflector on the Threshold Current Density in AlGaInP Visible Laser [pp. 1683-1686]
M.S. Oh, N.H. Kim, C.H. Lee, H.S. Park, J.Y. Kim, G. Pak, and T.I. Kim

Oxygen Incorporation, Photoluminescence, and Laser Performance of AlGaAs Grown by Organometallic Vapor Phase Epitaxy [pp. 1687-1690]
B.D. Schwartz, R.S. Setzko, J.S. Mott, S.H. Macomber, and J.J. Powers

Growth of High-Quality GaSb by Metalorganic Vapor Phase Epitaxy [pp. 1691-1696]
T. Koljonen, M. Sopanen, H. Lipsanen, and T. Tuomi

The Contraction of Lattice Constant and the Reduction of Growth Rate in p-InGaAs Grown by Organometallic Vapor Phase Epitaxy [pp. 1697-1701]
Jeong Soo Kim, Seung Won Lee, Hyung Mun Kim, Dae Kon Oh, Heung Ro Choo, Dong Hoon Jang, Hong Man Kim, Kwang Eui Pyun, and Hyung Moo Park

Monitoring of MOCVD Reactants by UV Absorption [pp. 1703-1706]
K.C. Baucom, K.P. Killeen, and H.K. Moffat

Metalorganic Chemical Vapor Deposition Growth of High Optical Quality and High Mobility GaN [pp. 1707-1710]
B.P. Keller, S. Keller, D. Kapolnek, W.-N Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J.S. Speck, U.K. Mishra, and S.P. DenBaars

A New Buffer Layer for MOCVD Growth of GaN on Sapphire [pp. 1711-1714]
X. Li, D.V. Forbes, S.Q. Gu, D.A. Turnbull, S.G. Bishop, and J.J. Coleman

Large Scale Production of Indium Antimonide Film for Position Sensors in Automobile Engines [pp. 1715-1718]
Egbert Woelk, Holger Jürgensen, Randy Rolph, and Tim Zielinski

Carbon Doped GaAs Grown in Low Pressure-Metalorganic Vapor Phase Epitaxy Using Carbon Tetrabromide [pp. 1719-1722]
E. Richter, P. Kurpas, D. Gutsche, and M. Weyers


The Role of the V/III Ratio in the Growth and Structural Properties of Metalorganic Vapor Phase Epitaxy GaAs/Ge Heterostructures [pp. 1723-1730]
C. Pelosi, G. Attolini, C. Bocchi, P. Franzosi, C. Frigeri, M. Berti, A.V. Drigo, and F. Romanato

Evidence for Reductive Elimination of H2 in the Decomposition of Primary Arsines [pp. 1731-1738]
Douglas F. Foster, Christopher Glidewell, Gordon R. Woolley, and David J. Cole-Hamilton

Microstructural Study of the Effect of an Excess of Y2BaCuO5 and BaSnO3 Doping on the Texturing Process of YBa2Cu3O7-x Bulk Superconductors [pp. 1739-1745]
M.P. Delamare, I. Monot, J. Wang, and G. Desgardin

Defect Structures in Silicon Merged Epitaxial Lateral Overgrowth [pp. 1747-1751]
Srikanth B. Samavedam, Eric P. Kvam, Abul E. Kabir, and Gerold W. Neudeck

Characterization of Low Range GaAs [pp. 1753-1758]
Bijan Tadayon, Mark E. Twigg, Mohammad Fatemi, Michael Y. Frankel, Adriana Giordana, and D. Scott Katzer

Minority Carrier Lifetime in Doped and Undoped Epitaxially Grown n-type CdxHg1-xTe [pp. 1759-1764]
S. Barton, D. Dutton, P. Capper, C.L. Jones, and N. Metcalfe

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