Volume 25, Number 8, August 1996

This Month Featuring: Papers from the 1995 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials, which was held on October 10-12, 1995, in Baltimore, Maryland. View August 1996 Abstracts.


Foreword [p. 1133]
Ishwara Bhat

Application of Eddy Current Technique to Vertical Bridgman Growth of CdZnTe [pp. 1134-1138]
R. Shetty, C.K. Ard, and J.P. Wallace

Recent Results on Metalorganic Vapor Phase Epitaxially Grown HgCdTe Heterostructure Devices [pp. 1139-1145]
C.T. Elliott, N.T. Gordon, R.S. Hall, T.J. Phillips, A.M. White, C.L. Jones, C.D. Maxey, and N.E. Metcalfe

Minimally Cooled Heterojunction Laser Heterodyne Detectors in Metalorganic Vapor Phase Epitaxially Grown Hg1-xCdxTe [pp. 1146-1150]
C.T. Elliott, N.T. Gordon, T.J. Phillips, H. Steen, A.M. White, D.J. Wilson, C.L. Jones, C.D. Maxey, and N.E. Metcalfe

Negative Diffusion Capacitance in Auger-Suppressed HgCdTe Heterostructure Diodes [pp. 1151-1156]
T.J. Phillips and N.T. Gordon

Advanced Magneto-Transport Characterization of LPE-Grown Hg1-xCdxTe by Quantitative Mobility Spectrum Analysis [pp. 1157-1164]
J.R. Meyer, C.A. Hoffman, F.J. Bartoli, J. Antoszewski, L. Faraone, S.P. Tobin, P.W. Norton, C.K. Ard, D.J. Reese, L. Colombo, and P.K. Liao

SIMS Characterization of HgCdTe and Related II-VI Compounds [pp. 1165-1171]
Jack Sheng, Larry Wang, and Gayle E. Lux

Ion Drift in Cd-Rich HgCdTe Crystals [pp. 1172-1175]
J.F. Barbot, B.O. Wartlick, L.F. Pinhède, and C. Blanchard

Recent Progress on HgCdTe at the National Laboratory for Infrared Physics in China [pp. 1176-1182]
Junhao Chu and Dingyuan Tang

Trace Copper Measurements and Electrical Effects in LPE HgCdTe [pp. 1183-1187]
J.P. Tower, S.P. Tobin, P.W. Norton, A.B. Bollong, A. Socha, J.H. Tregilgas, C.K. Ard, and H.F. Arlinghaus

Reduction of CdZnTe Substrate Defects and Relation to Epitaxial HgCdTe Quality [pp. 1188-1195]
S. Sen, C.S. Liang, D.R. Rhiger, J.E. Stannard, and H.F. Arlinghaus

Magnetophonon Oscillations in the Transverse and Longitudinal Magnetoresistance of Hg1-xCdxTe [pp. 1196-1202]
J. Baars, C.L. Littler, D. Brink, and M. Bruder

Magnetoluminescence Properties of Hg1-xCdxTe Epitaxial Layers and Superlattice Structures Grown by Metalorganic Molecular Beam Epitaxy [pp. 1203-1208]
T.K. Tran, A. Parikh, S.D. Pearson, B.K. Wagner, R.G. Benz II, R.N. Bicknell-Tassius, C.J. Summers, T. Kelz, J.W. Tomm, W. Hoerstel, P. Schäfer, and U. Muller

Growth and Characterization of InTlSb for IR-Detectors [pp. 1209-1214]
N.H. Karam, R. Sudharsanan, T. Parodos, and M.A. Dodd

Electrical Characterization of Very-Narrow-Gap Bulk HgCdTe Single Crystals by Variable Magnetic Field Hall Measurements [pp. 1215-1220]
J.S. Kim, D.G. Seiler, R.A. Lancaster, and M.B. Reine

Study of the Charge Collection Efficiency of CdZnTe Radiation Detectors [pp. 1221-1231]
Y. Nemirovsky, A. Ruzin, G. Asa, and J. Gorelik

Application of II-VI Materials to Nuclear Medicine [pp. 1232-1240]
H. Bradford Barber

Drift Mobility and Photoluminescence Measurements on High Resistivity Cd1-xZnxTe Crystals Grown from Te-Rich Solution [pp. 1241-1246]
K. Suzuki, S. Seto, S. Dairaku, N. Takojima, T. Sawada, and K. Imai

Photon Assisted Growth of Nitrogen-Doped CdTe and the Effects of Hydrogen Incorporation During Growth [pp. 1247-1253]
Zhonghai Yu, S.L. Buczkowski, M.C. Petcu, N.C. Giles, T.H. Myers, and M. Richards-Babb

Comparison of HgTe Materials Grown in (100), (110), (111), and (211) Orientations [pp. 1254-1259]
Srinivasan Krishnamurthy, A.-B. Chen, and A. Sher

Comparison of the Diffusion of Hg into CdTe and Hg0.8Cd0.2Te [pp. 1260-1265]
M.U. Ahmed, E.D. Jones, J.B. Mullin, and N.M. Stewart

Enhancement of the Steady State Minority Carrier Lifetime in HgCdTe Photodiode Using ECR Plasma Hydrogenation [pp. 1266-1269]
Han Jung, Hee Chul Lee, and Choong-Ki Kim

Dry Etching of Hg1-xCdxTe Using CH4/H2/Ar/N2 Electron Cyclotron Resonance Plasmas [pp. 1270-1275]
Robert C. Keller, M. Seelmann-Eggebert, and H.J. Richter

Growth of Fully Doped Hg1-xCdxTe Heterostructures Using a Novel Iodine Doping Source to Achieve Improved Device Performance at Elevated Temperatures [pp. 1276-1285]
C.D. Maxey, C.L. Jones, N.E. Metcalfe, R. Catchpole, M.R. Houlton, A.M. White, N.T. Gordon, and C.T. Elliott

HgCdTe/CdZnTe P-I-N High-Energy Photon Detectors [pp. 1286-1292]
W.J. Hamilton, D.R. Rhiger, S. Sen, M.H. Kalisher, G.R. Chapman, and R.E. Mills

Interface Formation Between Deposited Sn and Hg0.8Cd0.2Te [pp. 1293-1299]
H. Zimmermann, Robert C. Keller, P. Meisen, H.J. Richter, and M. Seelmann-Eggebert

P-Type Doping with Arsenic in (211)B HgCdTe Grown by MBE [pp. 1300-1305]
P.S. Wijewarnasuriya, S.S. Yoo, J.P. Faurie, and S. Sivananthan

Synchrotron X-Ray Photoconductor Detector Arrays Made on MBE Grown CdTe [pp. 1306-1311]
S.S.Yoo, B. Rodricks, S. Sivananthan, J.P. Faurie, and P.A. Montano

Characteristics and Uniformity of Group V Implanted and Annealed HgCdTe Heterostructure [pp. 1312-1317]
L.O. Bubulac, J. Bajaj, W.E. Tennant, M. Zandian, J. Pasko, and W.V. McLevige

CdZnTe Photodiode Arrays for Medical Imaging [pp. 1318-1322]
R. Sudharsanan, T. Parodos, A. Ruzin, Y. Nemirovsky, and N.H. Karam

Material Inhomogeneities in Cd1-xZnxTe and Their Effects on Large Volume Gamma-Ray Detectors [pp. 1323-1327]
J.M. VanScyoc, J.C. Lund, D.H. Morse, A.J. Antolak, R.W. Olsen, R.B. James, M. Schieber, H. Yoon, M.S. Goorsky, J. Toney, and T.E. Schlesinger

Improved Arsenic Doping in Metalorganic Chemical Vapor Deposition of HgCdTe and in situ Growth of High Performance Long Wavelength Infrared Photodiodes [pp. 1328-1335]
P. Mitra, Y.L. Tyan, F.C. Case, R. Starr, and M.B. Reine

Modeling Ion Implantation of HgCdTe [pp. 1336-1340]
H.G. Robinson, D.H. Mao, B.L. Williams, S. Holander-Gleixner, J.E. Yu, and C.R. Helms

Heteroepitaxy of HgCdTe(112) Infrared Detector Structures on Si(112) Substrates by Molecular-Beam Epitaxy [pp. 1341-1346]
T.J. deLyon, R.D. Rajavel, J.E. Jensen, O.K. Wu, S.M. Johnson, C.A. Cockrum, and G.M. Venzor

Orientation Dependence of HgCdTe Epitaxial Layers Grown by MOCVD on Si Substrates [pp. 1347-1352]
K. Shigenaka, K. Matsushita, L. Sugiura, F. Nakata, K. Hirahara, M. Uchikoshi, M. Nagashima, and H. Wada

Growth of (111) HgCdTe on (100) Si by MOVPE Using Metalorganic Tellurium Adsorption and Annealing [pp. 1353-1357]
K. Maruyama, H. Nishino, T. Okamoto, S. Murakami, T. Saito, Y. Nishijima, M. Uchikoshi, M. Nagashima, and H. Wada

Direct Growth of CdTe on (100), (211), and (111) Si by Metalorganic Chemical Vapor Deposition [pp. 1358-1361]
H. Ebe, T. Okamoto, H. Nishino, T. Saito, Y. Nishijima, M. Uchikoshi, M. Nagashima, and H. Wada

Metalorganic Vapor Phase Epitaxy of (100) CdZnTe Layers Using Diisopropylzinc Source [pp. 1362-1365]
K. Yasuda, K. Kawamoto, T. Maejima, M. Minamide, K. Kawaguchi, and H. Maeba

Pb1-xSnxSe-on-Si LWIR Sensor Arrays and Thermal Imaging with JFET/CMOS Read-Out [pp. 1366-1370]
H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino, and W. Buttler

In Situ Sensors for Monitoring and Control in Molecular Beam Epitaxial Growth of Hg1-xCdxTe [pp. 1371-1374]
M.J. Bevan, W.M. Duncan, G.H. Westphal, and H.D. Shih

Key Performance-Limiting Defects in P-on-N HgCdTe LPE Heterojunction Infrared Photodiodes [pp. 1375-1382]
M.C. Chen, R.S. List, D. Chandra, M.J. Bevan, L. Colombo, and H.F. Schaake

Annealing Studies of Undoped Hg1-xMnxTe Bulk Crystals at High Temperatures [pp. 1383-1387]
Susan W. Kutcher, T.O. Poehler, Sudhir Trivedi, Zhengchen Yu, H.R. Vydyanath, and P. Becla

Mercury Cadmium Telluride-Based Resonant Cavity Light Emitting Diode [pp. 1388-1393]
J.L. Pautrat, E. Hadji, J. Bleuse, and N. Magnea

Uniform Low Defect Density Molecular Beam Epitaxial HgCdTe [pp. 1394-1401]
J. Bajaj, J.M. Arias, M. Zandian, D.D. Edwall, J.G. Pasko, L.O. Bubulac, and L.J. Kozlowski

Growth of High Quality CdTe on Si Substrates by Molecular Beam Epitaxy [pp. 1402-1405]
L.A. Almeida, Y.P. Chen, J.P. Faurie, S. Sivananthan, David J. Smith, and S.-C.Y. Tsen

In-Situ Spectroscopic Ellipsometry of HgCdTe [pp. 1406-1410]
J.D. Benson, A.B. Cornfeld, M. Martinka, K.M. Singley, Z. Derzko, P.J. Shorten, J.H. Dinan, P.R. Boyd, F.C. Wolfgram, B. Johs, P. He, and John A. Woollam

Status of MBE Technology for the Flexible Manufacturing of HgCdTe Focal Plane Arrays [pp. 1411-1415]
R.D. Rajavel, D. Jamba, O.K. Wu, J.A. Roth, P.D. Brewer, J.E. Jensen, C.A. Cockrum, G.M. Venzor, and S.M. Johnson

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