Volume 25, Number 9, September 1996

This Month Featuring: Regular Issue Papers . View September 1996 Abstracts.


Efficiency-Limiting Defects in Silicon Solar Cell Material [pp. 1417-1421]
Jeff Bailey, Scott A. McHugo, Henry Hieslmair, and Eicke R. Weber

The Structural, Optical, and Electrical Properties of Vacuum Evaporated Cu-Doped ZnTe Polycrystalline Thin Films [pp. 1422-1427]
L. Feng, D. Mao, J. Tang, R.T. Collins, and J.U. Trefny

Dry Etching of InGaAlP Alloys in Cl2/Ar High Ion Density Plasmas [pp. 1428-1433]
J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, C.J. Santana, S.J. Pearton, W.S.Hobson, and F. Ren

Low-Pressure Pyrolysis Studies of a New Phosphorous Precursor: Tertiarybutylbis(dimethylamino)phosphine [pp. 1434-1438]
C.W. Hill, R.W. Gedridge, Jr., T.J. Groshens, G.B. Stringfellow, and L.P. Sadwick

Phase Equilibria in InAsSbP Quaternary Alloys Grown by Liquid Phase Epitaxy [pp. 1439-1445]
M.R. Wilson, A. Krier, and Y. Mao

Fabrication of Dry-Etched Mirrors in GaAs-Based and InP-Based Lasers Using Chemically Assisted Ion-Beam Etching at Low Temperatures [pp. 1446-1450]
R.E. Sah, J.D. Ralston, J. Daleiden, E.C. Larkins, S. Weisser, J. Fleissner, and W. Benz

The Modification of Electrophotographic and Mechanical Properties of Organic Photoconductors by Ultra-Violet Irradiation [pp. 1451-1457]
C.K.H. Wong, Y.C. Chan, Y.W. Lam, D.P. Webb, K.M. Leung, and D.S. Chiu

Photoluminescence and Raman Scattering Characterization of Silicon-Doped In0.52Al0.48As Grown on InP (100) Substrates by Molecular Beam Epitaxy [pp. 1458-1462]
S.F. Yoon, Y.B. Miao, K. Radhakrishnan, and S. Swaminathan

Al-Ga-As-Dopant Phase-Equilibria for Liquid Phase Epitaxy [pp.1463-1468]
C. Algora and M.A. Martínez

Incorporation of Group V Elements in GaxIn1-xAsyP1-y Grown by Gas Source Molecular Beam Epitaxy [pp. 1469-1473]
Tsuen-Lin Lee, Jin-Shung Liu, and Hao-Hsiung Lin

Formation of Ohmic Contacts to p-ZnTe [pp. 1474-1477]
J.T. Trexler, J.J. Fijol, L.C. Calhoun, R.M. Park, and P.H. Holloway

Microstructural Analysis of a Au/Pt/Pd/Zn Ohmic Contact to an AlGaAs/GaAs Heterojunction Bipolar Transistor [pp. 1478-1486]
P. Jian, D.G. Ivey, S. Eicher, and T.P. Lester

The Scaling of CVD Rotating Disk Reactors to Large Sizes and Comparison with Theory [pp. 1487-1494]
Alan G. Thompson, R.A. Stall, P. Zawadzki, and G.H. Evans

Heterojunction Diodes in 3C-SiC/Si System Grown by Reactive Magnetron Sputtering: Effects of Growth Temperature on Diode Rectification and Breakdown [pp. 1495-1500]
Q. Wahab, M. Karlsteen, O. Nur, L. Hultman, M. Willander, and J.-E. Sundgren

Efficient 2.0-2.6 µm Wavelength Photoluminescence from Narrow Bandgap InAsP/InGaAs Double Heterostructures Grown on InP Substrates [pp. 1501-1505]
D. Garbuzov, D.-S. Kim, S.R. Forrest, R. Menna, M. Lange, G.H. Olsen, and M. Cohen

Comparative Measurements of the Electron Emission Behavior of Si3N4-InGaAs Interfaces Prepared by Remote and Direct PECVD [pp. 1506-1513]
P.J.M. Parmiter and J.G. Swanson

Growth, Characterization and Modeling of InxGa1-xP Stripes by Selective-Area MOCVD [pp. 1514-1520]
J.F. Kluender, A.M. Jones, R.M. Lammert, J.E. Baker, and J.J. Coleman

Phase Modulated Ellipsometry Used for Composition Control during MBE Growth of CdHgTe: An Analysis of Instrumental Factors and an Assessment of the Material Produced [pp. 1521-1526]
R.H. Hartley, M.A. Folkard, D. Carr, P.J. Orders, G. Shen, V. Kumar, T.A. Steele, I.K. Varga, B.A. Johnson, K. Fueloop, P. Capper, D. Dutton, S. Barton, I. Gale, and F. Grainger

Extremely Strong and Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped GaAs, AlGaAs and AlGaAs/GaAs Single Quantum Wells [pp. 1527-1530]
Toshiki Makimoto and Naoki Kobayashi

Film Morphology and Reaction Rate for the CVD of Tungsten by the WF6-SiH4 Reaction [pp. 1531-1538]
O.H. Gokce, J.T. Sears, and T. Sahin

Co-Pyrolysis of DIPSbH and TMIn [pp. 1539-1544]
Y.S. Chun, G.B. Stringfellow, and R.W. Gedridge, Jr.

Structural Characterization of Bulk GaN Crystals Grown Under High Hydrostatic Pressure [pp. 1545-1550]
Zuzanna Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, and S. Porowski

Optimization of the Spacer Layer Thickness in AlInAs/InGaAs/InP MODFETs [pp. 1551-1553]
Matthew L. Seaford, Glenn Martin, L.F. Eastman, Dave Hartzell, and Scott Massie

Mass Spectroscopy Study of GaN Metalorganic Chemical Vapor Deposition [pp. 1554-1560]
Y. Park and D. Pavlidis

A Model of the Interdiffused Multilayer Process [pp. 1561-1572]
Spyros A. Svoronos, Wilbur W. Woo, Stuart J.C. Irvine, Haluk O. Sankur, and Jagmohan Bajaj

Direct questions about this or any other JEM page to

Search TMS Document Center Tables of Contents Subscriptions JEM TMS OnLine