Volume 24, Number 3, March 1995

This Month Featuring: Proceedings of the symposium on Short Wavelength Optical Sources Based on Wide Bandgap II-VI Heterostructures and Regular Issue Papers from the 36th Electronic Materials Conference in Boulder, Colorado, June 22-24, 1994. View March 1995 Abstracts.


Foreword [pp. 115-116]
Leslie A. Kolodziejski

Design of Pseudo-Ternary and Quaternary Alloys by Superlattices Consisting of (Zn,Cd)(S,Se) BinaryII-VI Compounds [pp. 117-121]
A.W. Jia, M. Kobayashi, and A. Yoshikawa

Optical Properties, Electronic Structure, and Exciton Binding Energies in Short Period ZnS-ZnSe Superlattices [pp. 123-129]
T. Cloitre, L. Aigouy, M. DiBlasio, B. Gil, P. Bigenwald, N. Briot, O. Briot, D. Bouchara, M. Averous, and R.L. Aulombard

The Study of Nitrogen Doping in ZnSe and ZnSe:Te [pp. 131-135]
Y. Fan, J. Han, R.L. Gunshor, J. Walker, N.M. Johnson, and A.V. Nurmikko

Thermal Annealing Effects on p-type Conductivity of Nitrogen-Doped ZnSe Grown by Metalorgnic Vapor Phase Epitaxy [pp. 137-141]
Shizuo Fujita, Tsuyoshi Tojyo, Tetsu Yoshizawa, and Shigeo Fujita

Au and Ag Electrical Contacts to p-ZnSe [pp. 143-150]
J.J. Fijol, LC. Calhoun, R.M. Park, and P.H. Holloway

Ohmic Contact and Transport Properties of II-VI Green/Blue Laser Diodes [pp. 151-154]
Jung Han R.L. Gunshor, and A.V. Nurmikko

Misfit Strain Induced Tweed-Twin Transformation on Composition Modulation Zn1-xMgxSySe1-y Layers and the Quality Control of the ZnSe Buffer/GaAs Interface [pp. 155-163]
L.H. Kuo, L. Salamanca-Riba, B.J. Wu, and J.M. DePuydt

Deep Level Electronic Structure of ZnSe/GaAs Heterostructures [pp. 163-169]
A. Raisanen, L.J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, and L. Sorba

Remarkable Improvement in Emission Efficiency of ZnCdSe/Zn(S)Se LEDS by Thermal Annealing [pp. 171-176]
Yoshikatsu Ichimura, Katsumi Kishino, Masaru Kuramoto, Mitsunari Satake, and Atsushi Yoshida

Molecular Beam Epitaxial Growth of Green Light Emitting Diodes on ZnSe Wafers [pp. 177-181]
M.H. Jeon, L.C. Calhoun, and R.M. Park


In Situ P-Doped Si and Si1-xGex Epitaxial Films Grown by Remote Plasma Enhanced Chemical Vapor Deposition [pp. 183-188]
S. Thomas, J. Fretwell, D. Kinosky, R. Qian, A. Mahajan, P. Munguía, S. Banerjee, A. Tasch, and C. Magee

Effect of Substrate Smoothness on the Microstructure of YBa2Cu3O7-x/Y2O3/YBa2Cu3O7-x Trilayers [pp. 189-195]
G.L. Waytena, H.A. Hoff, R.R. Wolcott, Jr., P.R. Broussard, C.L. Vold, and J.A. Sprague

Uniform Intermixing of Quantum Wells in p-i-n Modulator Structures by Impurity Free Vacancy Diffusion [pp. 197-202]
S.J. Lycett, A.J. Dewdney, M. Ghisoni, C.E. Norman, R. Murray, D. Sansom, and J.S. Roberts

Internal Strain and Dislocations in InxGa1-xAs Crystals Grown by Liquid Phase Epitaxy/Electroepitaxy [pp. 203-209]
B. Bryskiewicz, T. Bryskiewicz, and E. Jiran

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