Volume 24, Number 5, May 1995

This Month Featuring: Proceedings of the 1993 U.S. Workshop on the Physics and Chemistry of HgCdTe and Other IR Materials held in San Antonio, Texas, October 29-31. View May 1995 Abstracts.


Foreword [p. 421]
James R. Waterman


HgCdTe Molecular Beam Epitaxy Technology: A Focus on Material Properties [pp. 423-429]
Owen K. Wu, D.M. Jamba, G.S. Kamath, G.R. Chapman, S.M. Johnson, J.M. Peterson, K. Kosai, and C.A. Cockrum

Precise Control of HgCdTe Growth Conditions for Molecular Beam Epitaxy [pp. 431-436]
Masaya Kawano, Tokuhito Sasaki, and Naoki Oda

Metalorganic Vapor Phase Epitaxy In-Situ Growth of p-on-n and n-on-p Hg1-xCdxTe Junction Photodiodes Using Tertiarybutylarsine as the Acceptor Source [pp. 437-443]
V. Rao, H. Ehsani, I.B. Bhat, M. Kestigian, R. Starr, M.H. Weiler, and M.B. Reine

Application of Spectroscopic Ellipsometry for Real-Time Control of CdTe and HgCdTe Growth in an OMCVD System [pp. 445-449]
S. Dakshina Murthy, I.B. Bhat, B. Johs, S. Pittal, and He


Growth of High Quality CdTe and ZnTe on Si Substrates Using Organometallic Vapor Phase Epitaxy [pp. 451-455]
Wen-Sheng Wang and Ishwara Bhat

Integrated In Situ Wafer and System Monitoring for the Growth of CdTe/ZnTe/GaAs/Si for Mercury Cadmium Telluride Epitaxy [pp. 457-465]
S.J.C. Irvine, J. Bajaj, R.V. Gil, and H. Glass

Direct Growth of CdZnTe/Si Substrates for Large-Area HgCdTe Infrared Focal Plane Arrays [pp. 467-473]
S.M. Johnson, T.J. deLyon, C.A. Cockrum, W.J. Hamilton, T. Tung, F.I. Gesswein, B.A. Baumgratz, L.M. Ruzicka, O.K. Wu, and J.A. Roth

Suppression of Twin Formation in CdTe(111)B Epilayers Grown by Molecular Beam Epitaxy on Misoriented Si(001) [pp. 475-481]
Y.P. Chen, J.P. Faurie, S. Sivananthan, G.C. Hua, and N. Otsuka

Large Area Deposition of Cd1-xZnxTe on GaAs and Si Substrates by Metalorganic Chemical Vapor Deposition [pp. 483-489]
N.H. Karam, R. Sudharsanan, A. Mastrovito, M.M. Sanfacon, F.T.J. Smith, M. Leonard, and N.A. El-Masry

Monitoring Vertical Bridgman-Stockbarger Growth of Cadmium Telluride by an Eddy Current Technique [pp. 491-495]
Gary J. Rosen, Frederick M. Carlson, Jeffrey E. Thompson, William R. Wilcox, and John P. Wallace

CdZnTe Substrate Impurities and Their Effects on Liquid Phase Epitaxy HgCdTe [pp. 497-504]
J.P. Tower, S.P. Tobin, M. Kestigian, P.W. Norton, A.B. Bollong, H.F. Schaake, and C.K. Ard

Etch Pit Characterization of CdTe andCdZnTe Substrates for Use in Mercury Cadmium Telluride Epitaxy [pp. 505-510]
W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, and H.F. Schaake

Copper Outdiffusion from CdZnTe Substrates and its Effect on the Properties of Metalorganic Chemical Vapor Deposition-Grown HgCdTe [pp. 511-513]
R. Korenstein, R.J. Olson, Jr., D. Lee, P.K. Liao, and C.A. Castro

Resonance Ionizaton Spectroscopy for Quantitative and Sensitive Surface and Bulk Measurements of Impurities in II-VI Materials [pp. 515-519]
S. Sen, J.E. Stannard, S.M. Johnson, H.F. Arlinghaus, and G.I. Bekov


Molecular Beam Epitaxy HgCdTe Growth-Induced Void Defects and Their Effect on Infrared Photodiodes [pp. 521-524]
J.M. Arias, M. Zandian, J. Bajaj, J.G. Pasko, L.O. Bubulac, S.H. Shin, and R.E. DeWames

How Dislocations Affect Transport [pp. 525-532]
A.T. Paxton, A. Sher, M. Berding, M. van Schilfgaarde, and M.W. Muller

Dislocation Profiles in HgCdTe(100) on GaAs(100) Grown by Metalorganic Chemical Vapor Deposition [pp. 533-537]
H. Nishino, S. Murakami, T. Saito, Y. Nishijima, and H. Takigawa

The Minority Carrier Lifetime in Doped and Undoped p-Type Hg0.78Cd0.22Te Liquid Phase Epitaxy Films [pp. 539-544]
M.C. Chen, L. Colombo, J.A. Dodge, and J.H. Tregilgas

Minority Carrier Lifetime in Indium-Doped HgCdTe(211)B Epitaxial Layers Grown by Molecular Beam Epitaxy [pp. 545-549]
P.S. Wijewarnasuriya, M.D. Lange, S. Sivananthan, and J.P. Faurie


Band Structure, Magneto-Transport, and Magneto-Optical Properties of InAs-Ga1-xInxSb Superlattices [pp. 551-557]
J.R. Meyer, C.A. Hoffman, J.P. Omaggio, E.R. Youngdale, F.J. Bartoli, R.H. Miles, D.H. Chow, and L.R. Ram-Mohan

Photoresponse Study of Normal Incidence Detection in p-Type GaAs/AlGaAs Multiple Quantum Wells [pp. 559-564]
G.J. Brown, F. Szmulowicz, and S.M. Hegde


Process Modeling and Simulation of Hg1-xCdxTe. Part I: Status of Stanford University Mercury Cadmium Telluride Process Simulator [pp. 565-571]
José L. Meléndez and C.R. Helms

Process Modeling and Simulation for Hg1-xCdxTe. Part II: Self-Diffusion, Interdiffusion, and Fundamental Mechanisms of Point-Defect Interactions in Hg1-xCdxTe [pp. 573-579]
José L. Meléndez and C.R. Helms

Studies on the Diffusion of Zinc and Iodine into CdTe [pp. 581-585]
E.D. Jones, J.C. Clark, J. Malzbender, J.B. Mullin, N. Shaw, and A.W. Brinkman

Diffusion in Mercury Cadmium Telluride--An Update [pp. 587-598]
D. Shaw

Variation of Arsenic Diffusion Coefficients in HgCdTe Alloys with Temperature and Hg Pressure: Tuning of p on n Double Layer heterojunction Diode Properties [pp. 599-608]
D. Chandra, M.C. Chen, and L.K. Magel

Enhanced Arsenic Diffusion and Activation in HgCdTe [pp. 609-615]
S.H. Shin, J.M. Arias, M. Zandian, J.G. Pasko, L.O. Bubulac, and R.E. deWames

P-Type Doping of Double Layer Mercury Cadmium Telluride for Junction Formation [pp. 617-624]
L.O. Bubulac, D.D. Edwall, S.J.C. Irvine, E.R. Gertner, and S.H. Shin

Annealing Experimenta in Heavily Arsenic-Doped (Hg,Cd)Te [pp. 625-634]
H.R. Vydyanath, L.S. Lichtmann, S. Sivananthan, P.S. Wijewarnasuriya, and J.P. Faurie


Status and Application of HgCdTe Device Modeling [pp. 635-640]
K. Kosai

Transport Studies in Narrow-Gap Semiconductors Revisited [pp. 641-646]
Srinivasan Krishnamurthy and Arden Sher

Metalorganic Chemical Vapor Deposition CdTe Passivation of HgCdTe [pp. 647-654]
Y. Nemirovsky, N. Amir, and L. Djaloshinski

Investigation of Epitaxial P-p CdTe/Hg0.775Cd0.225Te Heterojunctions by Capacitance-Voltage Profiling [pp. 655-659]
V. Ariel, V. Garber, G. Bahir, A. Sher, and G. Cinader

Metalorganic Chemical Vapor Depositon Growth of HgCdTe for Photodiode Applications [pp. 661-668]
P. Mitra, T.R. Schimert, F.C. Case, R. Starr, M.H. Weiler, M. Kestigian, and M.B. Reine

Independently Accessed Back-to-Back HgCdTe Photodiodes: A New Dual-Land Infrared Detector [pp. 669-679]
M.B. Reine, P.W. Norton, R. Starr, M.H. Weiler, M. Kestigian, B.L. Musicant, P. Mitra, T. Schimert, F.C. Case, I.B. Bhat, H. Ehsani, and V. Rao

Room Temperature Characterization of Hg1-xCdxTe P-on-n Heterostructure Photodiodes [pp. 681-684]
M. Zandian, J.G. Pasko, J.M. Arias, R.E. deWames, and S.H. Shin


Reflectance and Photoreflectance for In-Situ Monitoring of the Molecular Beam Epitaxial Growth of CdTe and Hg-Based Materials [pp. 685-690]
Zhonghai Yu, M.A. Mattson, T.H. Myers, K.A. Harris, R.W. Yanka, L.M. Mohnkern, L.C. Lew Yan Voon, L.R. Ram-Mohan, R.G. Benz II, B.K.Wagner, and C.J. Summers

Optical Properties of Undoped and Iodine-Doped CdTe [pp. 691-696]
N.C. Giles, Jaesun Lee, T.H. Myers, Zhonghai Yu, B.K. Wagner, R.G. Benz II, and C.J. Summers

A Comparison of Techniques for Nondestructive Composition Measurements in CdZnTe Substrates [pp. 697-705]
S.P Tobin, J.P. Tower, P.W. Norton, D. Chandler-Horowitz, P.M. Amirtharaj, V.C. Lopes, W.M. Duncan, A.J. Syllaios, C.K. Ard, N.C. Giles, Jaesun Lee, R. Balasubramanian, A.B. Bollong, T.W. Steiner, M.L.W. Thewalt, D.K. Bowen, and B.K. Tanner

Investigation of Monolayer Roughness in HgTe-CdTe Superlattices [pp. 707-712]
J.R. Meyer, K.A. Harris, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger, J.F. Egler, K. Mahalingam, and N. Otsuka

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