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1997 EMC: Calendar of Events



June 25-27, 1997 · 39TH ELECTRONIC MATERIALS CONFERENCE · Fort Collins, Colorado

EMC-97 Logo Sponsored by the Electronic Materials Committee of The Minerals, Metals & Materials Society's (TMS's) Electronic, Magnetic & Photonic Materials Division, the 39th Electronic Materials Conference will be held June 25-27, 1997, at Colorado State University, Fort Collins, Colorado. The following calendar outlines the majority of technical and social activities planned for conference participants. Additional detail is available as indicated by the linked terms.



TUESDAY, JUNE 24, 1997
Registration 3:00 pm - 8:00 pm Art Gallery
WEDNESDAY, JUNE 25, 1997
Registration 7:30 am - 4:00 pm West & Middle Ballroom
Plenary Lecture/Student Awards 8:30 am - 9:30 am Theater
Exhibit Booths 10:00 am - 9:00 pm West & Middle Ballroom
SESSIONS A THROUGH C
Session A: Wide Bandgap Surfaces and Emission 10:00 am - 12:00 noon Theater
Session B: Organic Electronic Materials 10:00 am - 12:00 noon Senate
Session C: Characterization of LT-GaAs and Composite Materials 10:00 am - 12:00 noon Cherokee
SESSIONS D THROUGH F
Session D: Wide Bandgap Nitrides: Epitaxial Growth 1:30 pm - 5:00 pm Theater
Session E: Ferroelectrics and High-Permittivity Oxides for Devices 1:30 pm - 5:00 pm Senate
Session F: Characterization and Applications of LT-GaAs 1:30 pm - 5:00 pm Cherokee
SESSIONS G THROUGH I
Session G: Defects, Defect Engineering and Device Reliability 1:30 pm - 5:00 pm Room: 214-16
Session H: Si-Ge and SiGeC Growth, Processing and Characterization 1:30 pm - 5:00 pm Room: 203-05
Session I: Quantum Electronic Materials: Dots 1:30 pm - 5:00 pm Room: A101, Clark Bldg.
Welcoming Reception 7:00 pm - 9:00 pm West & Middle Ballroom
THURSDAY, JUNE 26, 1997
Registration 7:30 am - 4:00 pm West & Middle Ballroom
SESSIONS J THROUGH L
Session J: Quantum Effect Materials: Dots and Wires 8:20 am - 12:00 noon Theater
Session K: Non-Destructive Testing and "In Situ" Monitoring 8:20 am - 12:00 noon Senate
Session L: Electronic Transport in Oxide Thin Films 8:20 am - 12:00 noon Cherokee
SESSIONS M THROUGH O
Session M: SiC Devices and Processing 8:20 am - 12:00 noon Room: 230
Session N: Wide Bandgap Nitrides: Characterization 8:20 am - 12:00 noon Room: East
Session O: Epitaxy For Devices 8:20 am - 12:00 noon Room: 214-16
Exhibit Booths 10:00 am - 5:00 pm West & Middle Ballroom
SESSIONS P THROUGH R
Session P: Optical Properties of Quantum Structures 1:30 pm - 5:00 pm Theater
Session Q: Photovoltaics 1:30 pm - 5:00 pm Senate
Session R: Compound Semiconductor Oxides 1:30 pm - 5:00 pm Cherokee
SESSIONS S THROUGH U
Session S: Bulk and Epitaxial Growth of SiC 1:30 pm - 5:00 pm Room: 230
Session T: Novel Nitride Materials 1:30 pm - 5:00 pm Room: East
Session U: Epitaxy 1:30 pm - 5:00 pm Room: 214-16
FRIDAY, JUNE 27, 1997
Registration 7:45 am - 12:00 noon West & Middle Ballroom
SESSIONS V THROUGH X
Session V: II-VI Structures: Self-assembled Quantum Dots and Heteroepitaxy 8:20 am - 12:00 noon Theater
Session W: Nanoscale Characterization and Fabrication 8:20 am - 12:00 noon Senate
Session X: Wafer Bonding and Material Integration Technology 8:20 am - 12:00 noon Cherokee
SESSIONS Y THROUGH AA
Session Y: Silicon-Based Optoelectronics 8:20 am - 12:00 noon Room: 230
Session Z: Wide Bandgap Nitrides: Devices and Processing 8:20 am - 12:00 noon Room: East
Session AA: Infrared Materials and Devices 8:20 am - 12:00 noon Room: 214-16


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