JOURNAL OF ELECTRONIC MATERIALS
TABLE OF CONTENTS
Volume 26, Number 6, June 1997

This Month Featuring: Proceesings of the 1996 U.S. Workshop on Physics and Chemistry of II-VI Materials. View June 1997 Abstracts.

SPECIAL ISSUE PAPERS

Foreword [p. 475]
Paul M. Amirtharaj and Ishwara B. Bhat

GROWTH OF MATERIALS

Molecular Beam Epitaxial Growth and Performance of Integrated Two-Color HgCdTe Detectors Operating in the Mid-Wave Infrared Band [pp.476-481]
R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, C. LeBeau, J.A. Wilson, E. Patten, K. Kosai, J. Johnson, J. Rosbeck, P. Goetz, and S.M. Johnson

MOCVD of Bandgap-Engineered HgCdTe p-n-N-P Dual-Band Infrared Detector Arrays [pp. 482-486]
P. Mitra, S.L. Barnes, F.C. Case, M.B. Reine, P. O'Dette, R. Starr, A. Hairston, K. Kuhler, M.H. Weiler, and B.L. Musicant

MBE-Grown HgCdTe Multi-Layer Heterojunction Structures for High Speed Low-Noise 1.3-1.6 µm Avalanche Photodetectors [pp. 487-491]
Owen K. Wu, Rajesh D. Rajavel, Terry J. DeLyon, John E. Jensen, Mike D. Jack, Ken Kosai, George R. Chapman, Sanghamitra Sen, Bonnie A. Baumgratz, Bobby Walker, and Bill Johnson

Improving Material Characteristics and Reproducibility of MBE HgCdTe [pp. 492-501]
D.D. Edwall, M. Zandian, A.C. Chen, and J.M. Arias

Spectroscopic Ellipsometry for Monitoring and Control of Molecular Beam Epitaxially Grown HgCdTe Heterostructures [pp. 502-506]
M.J. Bevan, L.A. Almeida, W.M. Duncan, and H.D. Shih

Strain Effects in CdTe (111) Epitaxial Layers Grown on GaAs (100) Substrates by Molecular Beam Epitaxy [pp. 507-510]
M.S. Han, T. W. Kang, J.H. Leem, B.K. Song, Y.B. Hou, W.H. Baek, M.H. Lee, J.H. Bahng, K.J. Kim, J.M. Kim, H.K. Kim, and T.W. Kim

Selective Area Epitaxy of CdTe [pp. 511-514]
Y.Y. Luo, A. Cavus, and M.C. Tamargo

Lattice Mismatch Induced Morphological Features and Strain in HgCdTe Epilayers on CdZnTe Substrates [pp. 515-523]
David R. Rhiger, Sanghamitra Sen, Jeffrey M. Peterson, Hua Chung, and Michael Dudley

Optimization of the Structural Properties of Hg1-xCdxTe(x = 0.18-0.30) Alloys: Growth and Modeling [pp. 524-528]
A. Parikh, S.D. Pearson, R.N. Bicknell-Tassius, L.H. Zhang, R. Benz, and C.J. Summers

SURFACES AND INTERFACES

Investigation of the Effects of Polishing and Etching on the Quality of Cd1-xZnxTe Using Spatial Mapping Techniques [pp. 529-533]
H. Yoon, J.M. Van Scyoc, M.S. Goorsky, H. Hermon, M. Schieber, J.C. Lund, and R.B. James

The Use of Atomic Hydrogen for Substrate Cleaning for Subsequent Growth of II-VI Semiconductors [pp. 534-541]
L.S. Hirsch, Zhonghai Yu, S.L. Buczkowski, T.H. Myers, and M.R. Richards-Babb

Surface Cleaning and Etching of CdZnTe and CdTe in H2/Ar, CH4/H2/Ar, and CH4/H2/N2/Ar Electron Cyclotron Resonance Plasams [pp. 542-551]
Robert C. Keller, H. Zimmermann, M. Seelmann-Eggebert, and H.J. Richter

Surface Passivation of HgCdTe by CdZnTe and Its Characteristics [pp. 552-555]
T.S. Lee, K.K. Choi, Y.T. Jeoung, H.K. Kim, J.M. Kim, Y.H. Kim, J.N. Chang, W.S. Song, S.U. Kim, M.J. Park, and S.D. Lee

New Surface Treatment Method for Impoving the Interface Characteristics of CdTe/Hg1-xCdxTe Heterostructure [pp. 556-560]
Seong Hoon Lee, Hyungcheol Shin, Hee Chul Lee, and Choong Ki Kim

CHARACTERIZATION

Temperature Dependence of the Optical Properties of Hg1-xCdxTe [pp. 561-566]
Charles C. Kim and S. Sivananthan

Application of Urbach Rule Optical Absorption to Composition Measurement of Cd1-yZnyTe [pp. 567-570]
A.J. Syllaios, P.-K. Liao, B.J. Greene, H.F. Schaake, N.-Y. Liu, and G. Westphal

Electronic Structure, Absorption Coefficient, and Auger Rate in HgCdTe and Thallium-Based Alloys [pp. 571-577]
Srinivasan Krishnamurthy, A.-B. Chen, and A. Sher

Evaluation of Low-Temperature Interdiffusion Coefficients in Hg-Based Superlattices by Monitoring the E1 Reflectance Peak [pp. 578-583]
M.A. Mattson, T.H. Myers, M.R. Richards-Babb, and J.R. Meyer

Inter-Layer Subband Mixing in MBE-Grown HgTe/CdTe Superlattices [pp. 584-587]
J.W. Park, Jaesun Lee, J.B. Choi, M.S. Hahn, B.K. Song, Y.B. Hou, T.W. Kang, Kyung-Hwa Yoo, C.A. Hoffman, J.R. Meyer, Y.T. Jeoung, H.K. Kim, and J.M. Kim

Improved Determination of Matrix Composition of Hg1-xCdxTe by SIMS [pp. 588-592]
Jack Sheng, Larry Wang, Gayle E. Lux, and Yumin Gao

An Optical Alternative to the Hall Test [pp. 593-599]
Frederick W. Clarke

X-Ray Rocking Curve Analysis of Ion Implanted Mercury Cadmium Telluride [pp. 600-605]
B.L. Williams, H.G. Robinson, C.R. Helms, and N. Zhu

Characterization of CdTe/Hg1-xCdx Heterostructures by High-Resolution X-Ray Diffraction [pp. 606-609]
N. Mainzer, D. Shilo, E. Zolotoyabko, G. Bahir, and A. Sher

DEFECTS

Surface Cracking in Zinc Diffused CdTe [pp. 610-615]
J.C. Clark, E.D. Jones, J.B. Mullin, and A.W. Brinkman

Numerical Simulation of Clustering Phenomena for Point-Defects in HgCdTe [pp. 616-620]
Iwao Sugiyama, Nobuyuki Kajihara, and Yoshihiro Miyamoto

Mode of Arsenic Incorporation in HgCdTe Grown by MBE [pp. 621-624]
S. Sivananthan, P.S. Wijewarnasuriya, F. Aqariden, H.R. Vydyanath, M. Zandian, D.D. Edwall, and J.M. Arias

Behavior of p-Type Dopants in Hg0.8Cd0.2Te [pp. 625-628]
M.A. Berding, A. Sher, and M. van Schilfgaarde

Modeling of Junction Formation and Drive-In in Ion Implanted HgCdTe [pp. 629-634]
S. Holander-Gleixner, B.L. Williams, H.G. Robinson, and C.R. Helms

DEVICES

Characterization of HgCdTe P-on-n Heterojunction Photodiodes and Their Defects Using Variable-Area Test Structures [pp. 635-642]
M.H. Weiler and G.J. Tarnowski

1/f Noise Studies in Uncooled Narrow Gap Hg1-xCdx Te Non-Equilibrium Diodes [pp. 643-648]
C.T. Elliott, N.T. Gordon, R.S. Hall, T.J. Phillips, C.L. Jones, and A. Best

High Performance SWIR HgCdTe Detector Arrays [pp. 649-655]
L.O. Bubulac, W.E. Tennant, J.G. Pasko, L.J. Kozlowski, M. Zandian, M.E. Motamedi, R.E. DeWames, J. Bajaj, N. Nayar, W.V. McLevige, N.S. Gluck, R. Melendes, D.E. Cooper, D.D. Edwall, J.M. ARias, R. Hall, and A.I. D'Souza

VSWIR and VLWIR MBE Grown HgCdTe Material and Detectors for Remote Sensing Applications [pp. 656-660]
A.I.D'Souza, L.C. Dawson, E.J. Anderson, A.D. Markum, W.E. Tennant, L.O. Bubulac, M. Zandian, J. G. Pasko, W.V. McLevige, D.D. Edwall, J.W. Derr, and J.E. Jandik

Photocurrent Effect on the Zero-Bias Dynamic Resistance of HgCdTe Photodiode [pp. 661-666]
Kwan Kim, Han Jung, Hyungcheol Shin, Hee Chul Lee, and Choong-Ki Kim

Resonant-Cavity Infrared Optoelectronic Devices [pp. 667-672]
J.L. Pautrat, E. Hadji, J. Bleuse, and N. Magnea

Modeling of Heterojunction HgCdTe Photodiodes Using Approximate k.p Approach [pp. 673-677]
V. Ariel and G. Bahir

Device Modeling of HgCdTe Vertically Integrated Photodiodes [pp. 678-682]
D.H. Mao, H.G. Robinson, D.U. Bartholomew, and C.R. Helms

MODELING

Thermodynamical Properties of Thallium-Based III-V Materials [pp. 683-687]
M.A. Berding, M. van Schilfgaarde, A. Sher, M.J. Antonell, and C.R. Abernathy

Applications of Thermodynamical Modeling in Molecular Beam Epitaxy of CdxHg1-xTe [pp. 688-695]
T. Colin and T. Skauli

WIDE-GAP MATERIALS

Structural Properties of ZnSySe1-y/ZnSe/GaAs (001) Heterostructures Grown by Photoassisted Metalorganic Vapor Phase Epitaxy [pp. 696-703]
X.G. Zhang, S. Kalisetty, J. Robinson, G. Zhao, D.W. Parent, J.E. Ayers, and F.C. Jain

Molecular Beam Epitaxial Growth of P-ZnSe:N Using a Novel Plasma Source [pp. 704-708]
K. Kimura, S. Miwa, T. Yasuda, L. H. Kuo, A. Ohtake, C.G. Jin, K. Tanaka, and T. Yao

A Comparison of Ethyl Iodide and Hydrogen Chloride for Doping ZnSe Grown by Photoassisted MOVPE [pp. 709-713]
D.W. Parent, S. Kalisetty, X.G. Zhang, G. Zhao, W. Zappone, J. Robinson, E. Heller, J.E. Ayers, and F.C. Jain

Degradation of ZnSe/ZnTe Multiquantum Well Contacts to p-ZnSe [pp. 714-721]
John J. Fijol and Paul H. Holloway

New Mechanisms in Photo-Assosited MOVPE of II-VI Semiconductors [722-726]
S.J.C. Irvine, A. Stafford, M.U. Ahmed, A. Brown, and H. Kheyrandish [pp. 722-726]

Gas Source Molecular Beam Epitaxy Growth of SrS:Ce for Flat Panel Displays [pp. 727-730]
W. Tong, T. Yang, W. Park, M. Chaichimansour, S. Schön, B.K. Wagner, and C.J. Summers

Photoluminescence of Nitrogen-Doped Zinc Selenide Epilayers [pp. 731-736]
M. Moldovan, S. Setzler, Zhonghai Yu, T.H. Myers, L.E. Halliburton, and N.C. Giles

X-RAY AND GAMMA-RAY

New Developments in CdTe and CdZnTe Detectors for X and -Ray Applications [pp. 737-743]
L. Verger, J.P. Bonnefoy, F. Glasser, and P. Ouvrier-Buffet

Fabrication and Characterization of CdZnTe Radiation Detectors with a New P-I-N Design [pp. 744-748]
R. Sudharsanan, G.D. Vakerlis, and N.H. Karam

Linear X-Ray Detector Array Made on Bulk CdZnTe for 30~100 keV Energy [pp. 749-756]
S.S. Yoo, G. Jennings, and P.A. Montano

Study of Contacts to CdZnTe Radiation Detectors [pp. 757-765]
Y. Nemirovsky, A. Ruzin, G. Asa, Y. Gorelik, and L. Li

Development of a 64 x 64 CdZnTe Array and Associated Readout Integrated Circuit for Use in Nuclear Medicine [pp. 766-772]
H.B. Barber, H.H. Barrett, F.L. Augustine, W.J. Hamilton, B.A. Apotovsky, E.L. Dereniak, F.P. Doty, J.D. Eskin, J.P. Garcia, D.G. Marks, K.J. Matherson, J.M. Woolfenden, and E.T. Young

Direct questions about this or any other JEM page to (jem@tms.org).

Search Tables of Contents Subscription Information JEM Home Page TMS OnLine