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Room: 314B
Session Chairpersons: S.J. Pearton, University of Florida, 343 NSC, PO Box 116400, Gainesville, FL 32611-6400
2:00 pm INVITED
EFFECT OF DRY ETCHING ON III-NITRIDES SURFACE: F. Ren, S.J. Pearton*, C.R. Abernathy*, J.R. Lothian, Bell Laboratories, 600 Mountain Ave., Rm. 7-B-207, Murray Hill, NJ 07974; *University of Florida, 343 NSC, PO Box 116400, Gainesville, FL 32611-6400
2:30 pm INVITED
GaAs SURFACE CHEMISTRY AND SURFACE DAMAGE IN A Cl2/Ar HIGH DENSITY PLASMA ETCHING PROCESS: Charles R. Eddy, Jr., O.J. Glembocki, D. Leonhardt, V.A. Shamamian, R.T. Holm, J.E. Butler, Naval Research Laboratory, S.W. Pang, University of Michigan, Ann Arbor, MI 48109-1120
3:00 pm
HIGH DENSITY ELECTRON CYCLOTRON RESONANCE ETCHING FOR METALS: K. Jung, J.W. Lee, Y. Park, J.R. Childress, S.J. Pearton, University of Florida, P.O. Box 116400, Gainesville, FL 32611
3:15 pm INVITED
DAMAGE EVOLUTION IN DRY-ETCHED GaAs: Comparison Between Reactive Ion Etching and Low Energy Electron Enhanced Etching: M.S. Goorsky, H.P. Gillis, A.M. Andrews, University of California, Los Angeles, CA
3:45 pm BREAK
Session Chairperson: F. Ren, Bell Laboratories, 600 Mountain Ave., Rm. 7-B-207, Murray Hill, NJ 07974
4:00 pm INVITED
SEMICONDUCTOR MATERIALS PROCESSING UTILIZING AN INDUCTIVELY COUPLED PLASMA BEAM SOURCE: C. Constantine, Plasma Therm, Inc.; R.J. Shul, Sandia National Laboratories; S.J. Pearton, University of Florida, Gainesville, FL 32611
4:30 pm INVITED
NANOMETER-SCALE STUDIES OF NITRIDE/ARSENIDE HETEROSTRUCTURES PRODUCED BY NITROGEN PLASMA EXPOSURE OF GaAs: Rachel S. Goldman1,2, B.G. Briner3, R.M. Feenstra2, M.L. O'Steen4, R.J. Hauenstein4, 1Present address; University of Michigan, Ann Arbor, MI; 2Carnegie Mellon University, Pittsburgh, PA; 3Fritz-Haber-Inst. Der Max-Plank-Gescllschaft, Germany; 4Oklahoma State University
5:00 pm
COMPARISON OF ECR PLASMA CHEMISTRIES FOR ETCHING OF InGaP AND AlGaP: J. Hong, J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine1, W.S. Hobson2, and F. Ren2, University of Florida, Gainesville, FL; 1Plasma Therm Inc.; 2Bell Laboratories
5:15 pm
COMPARISON OF DRY ETCHING OF II-V SEMICONDUCTORS IN Icl/Ar AND Ibr/Ar ELECTRON CYCLOTRON RESONANCE PLASMAS: J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, University of Florida, PO Box 116400, Gainesville, FL 32611; W.S. Hobson, F. Ren, Bell Laboratories
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