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May 23-28, 2010 • Hyatt Regency, Lake Tahoe
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ICMOVPE XV: Technical Program
May 23-28, 2010 • Hyatt Regency, Lake Tahoe

All technical programming and conference functions will take place at the Hyatt Regency Lake Tahoe in Incline Village, Nevada, USA. View the technical program session sheets online, or download the Final Program and Late News PDFs.


The program is designed to provide a wide range of opportunities for formal and informal discussions, as well as presentations on unlimited topics including the following:

  • Basic Growth Studies
  • Nitrides
  • Arsenides, Phosphides, Antimonides and Dilute Nitrides
  • Low Bandgap Materials
  • II-VI Materials and Devices
  • Oxides (TCO, dielectrics)
  • Novel Materials (magnetic materials, etc)
  • Heteroepitaxy
  • Nanostructures
  • Patterned Growth and Selective Area Epitaxy
  • Atomic Layer Deposition and Epitaxy
  • Virtual Substrates and Epitxial Lift-off
  • In Situ Monitoring and Process Control
  • In-situ Etching
  • Characterization
  • Growth of Devices
  • Energy Technology (solid state lighting, PV, Thermoelectrics, etc)
  • Equipment, Safety, Environmental and Production Issues


Plenary Speakers:  The following plenary speakers are tentatively scheduled.

  "SSL: The Killer III-V Epi Application."
Jeff Tsao, Sandia National Labs, USA
  "Recent Progress in Indium Gallium Nitride Based LEDs and LDs."
Takashi Mukai, Nichia, Japan

Invited Papers: The following is a list of invited papers.

  "Wurtzite–Zinc Blende Transition in InAs Nanowires."
Jonas Johansson, Lund University, Sweden
  "MOVPE Growth of Lattice Matched III/V Materials on Silicon Substrate for Optoelectronics."
Bernardette Kunert, Philipps-University Marburg, Germany
  "Metamorphic MOVPE Growth for High Quality Lattice-Mismatched III-V Solar Cells Junctions."
John Geisz, National Renewable Energy Labs, USA
  "III-V Semiconductor Nanowires -From Crystal Growth to Device Applications."
Takashi Fukui, Hokkaido University, Japan
  "InGaN Based True Green Laser Diodes on Novel Semi-Polar {20-21} GaN Substrates."
Masaki Ueno, Sumitomo Electric, Japan
  "Growth And Characterization Of Polar And Nonpolar Nitride Quantum Well Structures."
Menno Kappers, University of Cambridge, UK
  "Impact of Gas-Phase and Surface Chemistry During InGaN MOVPE."
J. Randall Creighton, Sandia National Labs, USA
  "Various Embedded Structures of InGaN LED Employing Selective MOCVD Growth."
Chang-Hee Hong, Chonbuk National University, Korea


Panel Discussion
A Panel Discussion session is being planned for Tuesday, May 25. The discussion topic will be "The Role of III-Vs in SSL and Terrestrial PV". Those interested in participating should contact Robert M. Biefeld at

Poster Sessions
ICMOVPE XV will feature poster sessions on Tuesday, May 25 and Thursday, May 27 from 4 to 6 p.m. each day. Authors will be provided an 8 feet long x 4 feet high poster board space for display purposes. Any visual aids that can support or clarify the results of the work are encouraged including:

  • Diagrams, charts, figures, or illustrations, but NOT the paper's text.
  • Graphics should be simple, colorful, well-labeled, and clear.
  • The title should be written in letters 3/4 to 2 inches high and readable from a distance of 6 feet.

Authors are responsible for the set up and tear down of their printed materials. Posters that are not retrieved by the designated time will be discarded. TMS and the ICMOVPE committee will not be held responsible for abandoned items.


For more information about this meeting, please complete the meeting inquiry form or contact:

TMS Meeting Services
184 Thorn Hill Road
Warrendale , PA 15086-7514 USA
Telephone (724) 776-9000, ext. 243
(800) 759-4TMS
Fax: (724) 776-3770